JPS57173937A - Treatment for solid by laser - Google Patents

Treatment for solid by laser

Info

Publication number
JPS57173937A
JPS57173937A JP56058954A JP5895481A JPS57173937A JP S57173937 A JPS57173937 A JP S57173937A JP 56058954 A JP56058954 A JP 56058954A JP 5895481 A JP5895481 A JP 5895481A JP S57173937 A JPS57173937 A JP S57173937A
Authority
JP
Japan
Prior art keywords
gas
molten
solid
region
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56058954A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335826B2 (enExample
Inventor
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56058954A priority Critical patent/JPS57173937A/ja
Publication of JPS57173937A publication Critical patent/JPS57173937A/ja
Publication of JPH0335826B2 publication Critical patent/JPH0335826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
JP56058954A 1981-04-17 1981-04-17 Treatment for solid by laser Granted JPS57173937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56058954A JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56058954A JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Publications (2)

Publication Number Publication Date
JPS57173937A true JPS57173937A (en) 1982-10-26
JPH0335826B2 JPH0335826B2 (enExample) 1991-05-29

Family

ID=13099225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56058954A Granted JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Country Status (1)

Country Link
JP (1) JPS57173937A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823255A (ja) * 1981-08-01 1983-02-10 Nippon Denso Co Ltd 内燃機関のアイドリング回転速度制御方法
JPS63187620A (ja) * 1987-01-30 1988-08-03 Sony Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823255A (ja) * 1981-08-01 1983-02-10 Nippon Denso Co Ltd 内燃機関のアイドリング回転速度制御方法
JPS63187620A (ja) * 1987-01-30 1988-08-03 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0335826B2 (enExample) 1991-05-29

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