JPS57169282A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS57169282A JPS57169282A JP56055252A JP5525281A JPS57169282A JP S57169282 A JPS57169282 A JP S57169282A JP 56055252 A JP56055252 A JP 56055252A JP 5525281 A JP5525281 A JP 5525281A JP S57169282 A JPS57169282 A JP S57169282A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- light
- transmission system
- neighborhood
- channels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 abstract 3
- 239000000470 constituent Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
PURPOSE:To enhance wavelength splitting performance using a multilayer film interference filter for a light source of a wavelength splitting multiplex transmission system, by providing the filter to shut off light with wavelength constituent except for that in the neighborhood of luminous center wavelength at the window of the LED package. CONSTITUTION:An LED chip 21 is fixed on a heat sink block 22 loaded in the package 23. Output light 30 from the LED chip 21 radiates through the window 40 at which the multilayer film interference filter 41 transmitting only the light with wavelength constituent in the neighborhood of luminous center wavelength is provided to attenuate the light allotted to the other channels. When it is used for the light source of the wavelength splitting multiplex transmission system, the transmission system with less cross talk between channels is available.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055252A JPS57169282A (en) | 1981-04-13 | 1981-04-13 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055252A JPS57169282A (en) | 1981-04-13 | 1981-04-13 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57169282A true JPS57169282A (en) | 1982-10-18 |
Family
ID=12993400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56055252A Pending JPS57169282A (en) | 1981-04-13 | 1981-04-13 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57169282A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0803711A1 (en) * | 1996-04-24 | 1997-10-29 | Mannesmann VDO AG | Illuminated display |
KR100634302B1 (en) | 2004-09-09 | 2006-10-16 | 서울반도체 주식회사 | Light emitting diode |
JP2016129189A (en) * | 2015-01-09 | 2016-07-14 | 信越半導体株式会社 | Infrared light emission element |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136293A (en) * | 1975-05-21 | 1976-11-25 | Oki Electric Ind Co Ltd | Wave length converter |
JPS5211784A (en) * | 1975-07-17 | 1977-01-28 | Matsushita Electric Ind Co Ltd | Photo semiconductor device |
-
1981
- 1981-04-13 JP JP56055252A patent/JPS57169282A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136293A (en) * | 1975-05-21 | 1976-11-25 | Oki Electric Ind Co Ltd | Wave length converter |
JPS5211784A (en) * | 1975-07-17 | 1977-01-28 | Matsushita Electric Ind Co Ltd | Photo semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0803711A1 (en) * | 1996-04-24 | 1997-10-29 | Mannesmann VDO AG | Illuminated display |
KR100634302B1 (en) | 2004-09-09 | 2006-10-16 | 서울반도체 주식회사 | Light emitting diode |
JP2016129189A (en) * | 2015-01-09 | 2016-07-14 | 信越半導体株式会社 | Infrared light emission element |
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