JPS57167636A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167636A
JPS57167636A JP3502381A JP3502381A JPS57167636A JP S57167636 A JPS57167636 A JP S57167636A JP 3502381 A JP3502381 A JP 3502381A JP 3502381 A JP3502381 A JP 3502381A JP S57167636 A JPS57167636 A JP S57167636A
Authority
JP
Japan
Prior art keywords
temperature
substrate
heat treatment
defect
nuclei
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3502381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216538B2 (enrdf_load_stackoverflow
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3502381A priority Critical patent/JPS57167636A/ja
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167636A publication Critical patent/JPS57167636A/ja
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216538B2 publication Critical patent/JPS6216538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP3502381A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167636A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3502381A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502381A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167636A true JPS57167636A (en) 1982-10-15
JPS6216538B2 JPS6216538B2 (enrdf_load_stackoverflow) 1987-04-13

Family

ID=12430454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502381A Granted JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167636A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171826A (ja) * 1982-03-26 1983-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 酸素析出物粒子の密度及び分布の調整方法
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171826A (ja) * 1982-03-26 1983-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 酸素析出物粒子の密度及び分布の調整方法
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6216538B2 (enrdf_load_stackoverflow) 1987-04-13

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