JPS57164590A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS57164590A
JPS57164590A JP4863581A JP4863581A JPS57164590A JP S57164590 A JPS57164590 A JP S57164590A JP 4863581 A JP4863581 A JP 4863581A JP 4863581 A JP4863581 A JP 4863581A JP S57164590 A JPS57164590 A JP S57164590A
Authority
JP
Japan
Prior art keywords
type
layer
laser
burried
impression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4863581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243355B2 (enrdf_load_stackoverflow
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4863581A priority Critical patent/JPS57164590A/ja
Publication of JPS57164590A publication Critical patent/JPS57164590A/ja
Publication of JPS6243355B2 publication Critical patent/JPS6243355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP4863581A 1981-04-01 1981-04-01 Photosemiconductor device Granted JPS57164590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4863581A JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4863581A JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Publications (2)

Publication Number Publication Date
JPS57164590A true JPS57164590A (en) 1982-10-09
JPS6243355B2 JPS6243355B2 (enrdf_load_stackoverflow) 1987-09-12

Family

ID=12808824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4863581A Granted JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS57164590A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (ja) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol 半導体レ−ザ
JPS62145792A (ja) * 1985-12-20 1987-06-29 Hitachi Ltd 半導体レ−ザ装置
JPS63158887A (ja) * 1986-09-02 1988-07-01 Nippon Sheet Glass Co Ltd 光偏向機能付半導体レ−ザ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (ja) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol 半導体レ−ザ
JPS62145792A (ja) * 1985-12-20 1987-06-29 Hitachi Ltd 半導体レ−ザ装置
JPS63158887A (ja) * 1986-09-02 1988-07-01 Nippon Sheet Glass Co Ltd 光偏向機能付半導体レ−ザ

Also Published As

Publication number Publication date
JPS6243355B2 (enrdf_load_stackoverflow) 1987-09-12

Similar Documents

Publication Publication Date Title
CA1132695A (en) Beam scanning using radiation pattern distortion
JPS57170584A (en) Semiconductor laser device
US4430741A (en) Semiconductor laser device
US4999843A (en) Vertical semiconductor laser with lateral electrode contact
JPS57164590A (en) Photosemiconductor device
US4730329A (en) Semiconductor laser device
EP0260439B1 (en) Semiconductor light emission system
US4691214A (en) Optical semiconductor apparatus
JP2772000B2 (ja) 電極分離型半導体レーザ装置
US4941148A (en) Semiconductor laser element with a single longitudinal oscillation mode
JPS63116489A (ja) 光集積回路
JPS57164591A (en) Photosemiconductor device
JPS62115795A (ja) 半導体レ−ザアレイ装置
JPS54107284A (en) Semiconductor junction laser and its production
JPS6453487A (en) Semiconductor laser device
JPS57162382A (en) Semiconductor laser
JPS5467392A (en) Composite semiconductor device
EP0193404B1 (en) A semiconductor laser array device
JPS57132387A (en) Semiconductor laser device
JPS63120491A (ja) 半導体レ−ザ
JPH0234828Y2 (enrdf_load_stackoverflow)
JPS5650592A (en) Semiconductor laser device
JPS6431335A (en) Electron beam generator
JPS5591892A (en) Semiconductor laser light emission device
JPS5712590A (en) Buried type double heterojunction laser element