JPS57162433A - Scanning method for energy beam - Google Patents
Scanning method for energy beamInfo
- Publication number
- JPS57162433A JPS57162433A JP56048582A JP4858281A JPS57162433A JP S57162433 A JPS57162433 A JP S57162433A JP 56048582 A JP56048582 A JP 56048582A JP 4858281 A JP4858281 A JP 4858281A JP S57162433 A JPS57162433 A JP S57162433A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- monocrystalline
- scan
- facet
- energy beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56048582A JPS57162433A (en) | 1981-03-31 | 1981-03-31 | Scanning method for energy beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56048582A JPS57162433A (en) | 1981-03-31 | 1981-03-31 | Scanning method for energy beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162433A true JPS57162433A (en) | 1982-10-06 |
| JPS641046B2 JPS641046B2 (cg-RX-API-DMAC10.html) | 1989-01-10 |
Family
ID=12807385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56048582A Granted JPS57162433A (en) | 1981-03-31 | 1981-03-31 | Scanning method for energy beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162433A (cg-RX-API-DMAC10.html) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784723A (en) * | 1982-04-09 | 1988-11-15 | Fujitsu Limited | Method for producing a single-crystalline layer |
| JPH0888196A (ja) * | 1994-07-22 | 1996-04-02 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| JPH08148428A (ja) * | 1994-11-18 | 1996-06-07 | Semiconductor Energy Lab Co Ltd | 半導体デバイスのレーザー処理方法 |
| US6753213B2 (en) | 1994-07-28 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| US7160792B2 (en) | 1994-07-22 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| JP2007019539A (ja) * | 1994-07-22 | 2007-01-25 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
-
1981
- 1981-03-31 JP JP56048582A patent/JPS57162433A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784723A (en) * | 1982-04-09 | 1988-11-15 | Fujitsu Limited | Method for producing a single-crystalline layer |
| JPH0888196A (ja) * | 1994-07-22 | 1996-04-02 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| US7160792B2 (en) | 1994-07-22 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| JP2007019539A (ja) * | 1994-07-22 | 2007-01-25 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| US6753213B2 (en) | 1994-07-28 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| JPH08148428A (ja) * | 1994-11-18 | 1996-06-07 | Semiconductor Energy Lab Co Ltd | 半導体デバイスのレーザー処理方法 |
| US6143661A (en) * | 1994-11-18 | 2000-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of processing semiconductor device with laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641046B2 (cg-RX-API-DMAC10.html) | 1989-01-10 |
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