JPS57161515A - Photoelectric detector - Google Patents

Photoelectric detector

Info

Publication number
JPS57161515A
JPS57161515A JP57036706A JP3670682A JPS57161515A JP S57161515 A JPS57161515 A JP S57161515A JP 57036706 A JP57036706 A JP 57036706A JP 3670682 A JP3670682 A JP 3670682A JP S57161515 A JPS57161515 A JP S57161515A
Authority
JP
Japan
Prior art keywords
photoelectric detector
photoelectric
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57036706A
Other languages
English (en)
Japanese (ja)
Inventor
Jiyan Pishiyaaru Gii
Rowaie Mishieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Publication of JPS57161515A publication Critical patent/JPS57161515A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP57036706A 1981-03-10 1982-03-10 Photoelectric detector Pending JPS57161515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8104712A FR2501915A1 (fr) 1981-03-10 1981-03-10 Photodetecteur sensible dans l'infra-rouge proche

Publications (1)

Publication Number Publication Date
JPS57161515A true JPS57161515A (en) 1982-10-05

Family

ID=9256029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036706A Pending JPS57161515A (en) 1981-03-10 1982-03-10 Photoelectric detector

Country Status (5)

Country Link
EP (1) EP0060743B1 (enExample)
JP (1) JPS57161515A (enExample)
CA (1) CA1177943A (enExample)
DE (1) DE3264361D1 (enExample)
FR (1) FR2501915A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
FR2598558B1 (fr) * 1986-05-07 1988-11-10 Telecommunications Sa Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm
DE3743288A1 (de) 1986-12-30 2015-06-18 Société Anonyme de Télécommunications Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung
GB8703592D0 (en) * 1987-02-17 1987-03-25 British Telecomm Capping layer fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638026A (en) * 1970-06-29 1972-01-25 Honeywell Inc Or photovoltaic device
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
FR2488048A1 (fr) * 1980-07-30 1982-02-05 Telecommunications Sa Detecteur photovoltaique sensible dans l'infrarouge proche

Also Published As

Publication number Publication date
EP0060743B1 (fr) 1985-06-26
FR2501915A1 (fr) 1982-09-17
FR2501915B1 (enExample) 1984-08-10
CA1177943A (en) 1984-11-13
EP0060743A1 (fr) 1982-09-22
DE3264361D1 (en) 1985-08-01

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