DE3264361D1 - Photodetector sensitive in the near infrared range - Google Patents
Photodetector sensitive in the near infrared rangeInfo
- Publication number
- DE3264361D1 DE3264361D1 DE8282400309T DE3264361T DE3264361D1 DE 3264361 D1 DE3264361 D1 DE 3264361D1 DE 8282400309 T DE8282400309 T DE 8282400309T DE 3264361 T DE3264361 T DE 3264361T DE 3264361 D1 DE3264361 D1 DE 3264361D1
- Authority
- DE
- Germany
- Prior art keywords
- near infrared
- infrared range
- photodetector sensitive
- photodetector
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8104712A FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3264361D1 true DE3264361D1 (en) | 1985-08-01 |
Family
ID=9256029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282400309T Expired DE3264361D1 (en) | 1981-03-10 | 1982-02-22 | Photodetector sensitive in the near infrared range |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0060743B1 (de) |
JP (1) | JPS57161515A (de) |
CA (1) | CA1177943A (de) |
DE (1) | DE3264361D1 (de) |
FR (1) | FR2501915A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
DE3743288A1 (de) | 1986-12-30 | 2015-06-18 | Société Anonyme de Télécommunications | Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung |
GB8703592D0 (en) * | 1987-02-17 | 1987-03-25 | British Telecomm | Capping layer fabrication |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638026A (en) * | 1970-06-29 | 1972-01-25 | Honeywell Inc | Or photovoltaic device |
FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
FR2488048A1 (fr) * | 1980-07-30 | 1982-02-05 | Telecommunications Sa | Detecteur photovoltaique sensible dans l'infrarouge proche |
-
1981
- 1981-03-10 FR FR8104712A patent/FR2501915A1/fr active Granted
-
1982
- 1982-02-22 DE DE8282400309T patent/DE3264361D1/de not_active Expired
- 1982-02-22 EP EP19820400309 patent/EP0060743B1/de not_active Expired
- 1982-03-02 CA CA000397447A patent/CA1177943A/en not_active Expired
- 1982-03-10 JP JP3670682A patent/JPS57161515A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS57161515A (en) | 1982-10-05 |
EP0060743A1 (de) | 1982-09-22 |
CA1177943A (en) | 1984-11-13 |
EP0060743B1 (de) | 1985-06-26 |
FR2501915A1 (fr) | 1982-09-17 |
FR2501915B1 (de) | 1984-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57191101A (en) | Caster with fixing device | |
JPS56157071A (en) | Photocell with wide area | |
DE3264979D1 (en) | Foldable reversible baby-carriage | |
JPS57153238A (en) | Sensor | |
GB2109993B (en) | Improved photodetector | |
GB2144909B (en) | Infra-red detector | |
GB2167554B (en) | Optically sensing device | |
JPS57183077A (en) | Photodetector | |
GB2059056B (en) | Infrared detection arrangements | |
GB2269653B (en) | Infrared proximity detector | |
GB2100058B (en) | Pyroelectric detector | |
DE3561978D1 (en) | Photographic elements sensitive to near infrared | |
GB8333474D0 (en) | Optically imersed infra-red detection | |
EP0061671A3 (en) | Sensor | |
DE3478496D1 (en) | An infrared sensor | |
GB2113383B (en) | Photoelectric inclination sensor | |
DE3264361D1 (en) | Photodetector sensitive in the near infrared range | |
DE3172767D1 (en) | Photovoltaic detector sensitive in the near infrared range | |
JPS57149779A (en) | Photodetector | |
DE3380794D1 (en) | Infrared detector | |
DE3373137D1 (en) | Infrared thermal detector | |
JPS57166084A (en) | Semiconductor resistor sensing light | |
GB2109991B (en) | Photodetector | |
GB2152691B (en) | Infra-red detector | |
GB2095035B (en) | Pyroelectric detector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |