JPS57161515A - Photoelectric detector - Google Patents
Photoelectric detectorInfo
- Publication number
- JPS57161515A JPS57161515A JP3670682A JP3670682A JPS57161515A JP S57161515 A JPS57161515 A JP S57161515A JP 3670682 A JP3670682 A JP 3670682A JP 3670682 A JP3670682 A JP 3670682A JP S57161515 A JPS57161515 A JP S57161515A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric detector
- photoelectric
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8104712A FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57161515A true JPS57161515A (en) | 1982-10-05 |
Family
ID=9256029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3670682A Pending JPS57161515A (en) | 1981-03-10 | 1982-03-10 | Photoelectric detector |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0060743B1 (ja) |
JP (1) | JPS57161515A (ja) |
CA (1) | CA1177943A (ja) |
DE (1) | DE3264361D1 (ja) |
FR (1) | FR2501915A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
DE3743288A1 (de) | 1986-12-30 | 2015-06-18 | Société Anonyme de Télécommunications | Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung |
GB8703592D0 (en) * | 1987-02-17 | 1987-03-25 | British Telecomm | Capping layer fabrication |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638026A (en) * | 1970-06-29 | 1972-01-25 | Honeywell Inc | Or photovoltaic device |
FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
FR2488048A1 (fr) * | 1980-07-30 | 1982-02-05 | Telecommunications Sa | Detecteur photovoltaique sensible dans l'infrarouge proche |
-
1981
- 1981-03-10 FR FR8104712A patent/FR2501915A1/fr active Granted
-
1982
- 1982-02-22 DE DE8282400309T patent/DE3264361D1/de not_active Expired
- 1982-02-22 EP EP19820400309 patent/EP0060743B1/fr not_active Expired
- 1982-03-02 CA CA000397447A patent/CA1177943A/en not_active Expired
- 1982-03-10 JP JP3670682A patent/JPS57161515A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0060743B1 (fr) | 1985-06-26 |
FR2501915A1 (fr) | 1982-09-17 |
FR2501915B1 (ja) | 1984-08-10 |
EP0060743A1 (fr) | 1982-09-22 |
DE3264361D1 (en) | 1985-08-01 |
CA1177943A (en) | 1984-11-13 |
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