CA1177943A - Photodetector sensitive to close-range infrareds - Google Patents
Photodetector sensitive to close-range infraredsInfo
- Publication number
- CA1177943A CA1177943A CA000397447A CA397447A CA1177943A CA 1177943 A CA1177943 A CA 1177943A CA 000397447 A CA000397447 A CA 000397447A CA 397447 A CA397447 A CA 397447A CA 1177943 A CA1177943 A CA 1177943A
- Authority
- CA
- Canada
- Prior art keywords
- photodetector
- value
- wave
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000035945 sensitivity Effects 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 description 12
- 238000005513 bias potential Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002674 ointment Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000645 Hg alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8104712 | 1981-03-10 | ||
| FR8104712A FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1177943A true CA1177943A (en) | 1984-11-13 |
Family
ID=9256029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000397447A Expired CA1177943A (en) | 1981-03-10 | 1982-03-02 | Photodetector sensitive to close-range infrareds |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0060743B1 (enExample) |
| JP (1) | JPS57161515A (enExample) |
| CA (1) | CA1177943A (enExample) |
| DE (1) | DE3264361D1 (enExample) |
| FR (1) | FR2501915A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5144396A (en) * | 1987-02-17 | 1992-09-01 | British Telecommunications Public Limited Company | Capping layer fabrication |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
| FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
| DE3743288A1 (de) | 1986-12-30 | 2015-06-18 | Société Anonyme de Télécommunications | Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3638026A (en) * | 1970-06-29 | 1972-01-25 | Honeywell Inc | Or photovoltaic device |
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
| FR2488048A1 (fr) * | 1980-07-30 | 1982-02-05 | Telecommunications Sa | Detecteur photovoltaique sensible dans l'infrarouge proche |
-
1981
- 1981-03-10 FR FR8104712A patent/FR2501915A1/fr active Granted
-
1982
- 1982-02-22 EP EP82400309A patent/EP0060743B1/fr not_active Expired
- 1982-02-22 DE DE8282400309T patent/DE3264361D1/de not_active Expired
- 1982-03-02 CA CA000397447A patent/CA1177943A/en not_active Expired
- 1982-03-10 JP JP57036706A patent/JPS57161515A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5144396A (en) * | 1987-02-17 | 1992-09-01 | British Telecommunications Public Limited Company | Capping layer fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0060743B1 (fr) | 1985-06-26 |
| FR2501915A1 (fr) | 1982-09-17 |
| FR2501915B1 (enExample) | 1984-08-10 |
| EP0060743A1 (fr) | 1982-09-22 |
| JPS57161515A (en) | 1982-10-05 |
| DE3264361D1 (en) | 1985-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEC | Expiry (correction) | ||
| MKEX | Expiry |