FR2501915B1 - - Google Patents

Info

Publication number
FR2501915B1
FR2501915B1 FR8104712A FR8104712A FR2501915B1 FR 2501915 B1 FR2501915 B1 FR 2501915B1 FR 8104712 A FR8104712 A FR 8104712A FR 8104712 A FR8104712 A FR 8104712A FR 2501915 B1 FR2501915 B1 FR 2501915B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8104712A
Other languages
French (fr)
Other versions
FR2501915A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR8104712A priority Critical patent/FR2501915A1/fr
Priority to DE8282400309T priority patent/DE3264361D1/de
Priority to EP82400309A priority patent/EP0060743B1/fr
Priority to CA000397447A priority patent/CA1177943A/en
Priority to JP57036706A priority patent/JPS57161515A/ja
Publication of FR2501915A1 publication Critical patent/FR2501915A1/fr
Application granted granted Critical
Publication of FR2501915B1 publication Critical patent/FR2501915B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
FR8104712A 1981-03-10 1981-03-10 Photodetecteur sensible dans l'infra-rouge proche Granted FR2501915A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8104712A FR2501915A1 (fr) 1981-03-10 1981-03-10 Photodetecteur sensible dans l'infra-rouge proche
DE8282400309T DE3264361D1 (en) 1981-03-10 1982-02-22 Photodetector sensitive in the near infrared range
EP82400309A EP0060743B1 (fr) 1981-03-10 1982-02-22 Photodétecteur sensible dans l'infra-rouge proche
CA000397447A CA1177943A (en) 1981-03-10 1982-03-02 Photodetector sensitive to close-range infrareds
JP57036706A JPS57161515A (en) 1981-03-10 1982-03-10 Photoelectric detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8104712A FR2501915A1 (fr) 1981-03-10 1981-03-10 Photodetecteur sensible dans l'infra-rouge proche

Publications (2)

Publication Number Publication Date
FR2501915A1 FR2501915A1 (fr) 1982-09-17
FR2501915B1 true FR2501915B1 (enExample) 1984-08-10

Family

ID=9256029

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8104712A Granted FR2501915A1 (fr) 1981-03-10 1981-03-10 Photodetecteur sensible dans l'infra-rouge proche

Country Status (5)

Country Link
EP (1) EP0060743B1 (enExample)
JP (1) JPS57161515A (enExample)
CA (1) CA1177943A (enExample)
DE (1) DE3264361D1 (enExample)
FR (1) FR2501915A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
FR2598558B1 (fr) * 1986-05-07 1988-11-10 Telecommunications Sa Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm
DE3743288A1 (de) 1986-12-30 2015-06-18 Société Anonyme de Télécommunications Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung
GB8703592D0 (en) * 1987-02-17 1987-03-25 British Telecomm Capping layer fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638026A (en) * 1970-06-29 1972-01-25 Honeywell Inc Or photovoltaic device
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
FR2488048A1 (fr) * 1980-07-30 1982-02-05 Telecommunications Sa Detecteur photovoltaique sensible dans l'infrarouge proche

Also Published As

Publication number Publication date
EP0060743B1 (fr) 1985-06-26
FR2501915A1 (fr) 1982-09-17
CA1177943A (en) 1984-11-13
EP0060743A1 (fr) 1982-09-22
JPS57161515A (en) 1982-10-05
DE3264361D1 (en) 1985-08-01

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Legal Events

Date Code Title Description
ST Notification of lapse