FR2501915A1 - Photodetecteur sensible dans l'infra-rouge proche - Google Patents
Photodetecteur sensible dans l'infra-rouge proche Download PDFInfo
- Publication number
- FR2501915A1 FR2501915A1 FR8104712A FR8104712A FR2501915A1 FR 2501915 A1 FR2501915 A1 FR 2501915A1 FR 8104712 A FR8104712 A FR 8104712A FR 8104712 A FR8104712 A FR 8104712A FR 2501915 A1 FR2501915 A1 FR 2501915A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- tttee
- photodetector according
- value
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 12
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 230000023077 detection of light stimulus Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910000645 Hg alloy Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241001136792 Alle Species 0.000 description 1
- 241001606065 Aoa Species 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000013547 stew Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8104712A FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
| DE8282400309T DE3264361D1 (en) | 1981-03-10 | 1982-02-22 | Photodetector sensitive in the near infrared range |
| EP82400309A EP0060743B1 (fr) | 1981-03-10 | 1982-02-22 | Photodétecteur sensible dans l'infra-rouge proche |
| CA000397447A CA1177943A (en) | 1981-03-10 | 1982-03-02 | Photodetector sensitive to close-range infrareds |
| JP57036706A JPS57161515A (en) | 1981-03-10 | 1982-03-10 | Photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8104712A FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2501915A1 true FR2501915A1 (fr) | 1982-09-17 |
| FR2501915B1 FR2501915B1 (enExample) | 1984-08-10 |
Family
ID=9256029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8104712A Granted FR2501915A1 (fr) | 1981-03-10 | 1981-03-10 | Photodetecteur sensible dans l'infra-rouge proche |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0060743B1 (enExample) |
| JP (1) | JPS57161515A (enExample) |
| CA (1) | CA1177943A (enExample) |
| DE (1) | DE3264361D1 (enExample) |
| FR (1) | FR2501915A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3743288A1 (de) | 1986-12-30 | 2015-06-18 | Société Anonyme de Télécommunications | Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
| FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
| GB8703592D0 (en) * | 1987-02-17 | 1987-03-25 | British Telecomm | Capping layer fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2096539A1 (enExample) * | 1970-06-29 | 1972-02-18 | Honeywell Inc | |
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2488048A1 (fr) * | 1980-07-30 | 1982-02-05 | Telecommunications Sa | Detecteur photovoltaique sensible dans l'infrarouge proche |
-
1981
- 1981-03-10 FR FR8104712A patent/FR2501915A1/fr active Granted
-
1982
- 1982-02-22 EP EP82400309A patent/EP0060743B1/fr not_active Expired
- 1982-02-22 DE DE8282400309T patent/DE3264361D1/de not_active Expired
- 1982-03-02 CA CA000397447A patent/CA1177943A/en not_active Expired
- 1982-03-10 JP JP57036706A patent/JPS57161515A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2096539A1 (enExample) * | 1970-06-29 | 1972-02-18 | Honeywell Inc | |
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/79 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3743288A1 (de) | 1986-12-30 | 2015-06-18 | Société Anonyme de Télécommunications | Bispektrale Empfangsvorrichtung für elektromagnetische Strahlung |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0060743B1 (fr) | 1985-06-26 |
| FR2501915B1 (enExample) | 1984-08-10 |
| CA1177943A (en) | 1984-11-13 |
| EP0060743A1 (fr) | 1982-09-22 |
| JPS57161515A (en) | 1982-10-05 |
| DE3264361D1 (en) | 1985-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |