JPS57153488A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57153488A
JPS57153488A JP56038957A JP3895781A JPS57153488A JP S57153488 A JPS57153488 A JP S57153488A JP 56038957 A JP56038957 A JP 56038957A JP 3895781 A JP3895781 A JP 3895781A JP S57153488 A JPS57153488 A JP S57153488A
Authority
JP
Japan
Prior art keywords
layer
width
groove
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56038957A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0141261B2 (enrdf_load_stackoverflow
Inventor
Takashi Sugino
Kunio Ito
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56038957A priority Critical patent/JPS57153488A/ja
Priority to US06/357,086 priority patent/US4520485A/en
Publication of JPS57153488A publication Critical patent/JPS57153488A/ja
Publication of JPH0141261B2 publication Critical patent/JPH0141261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP56038957A 1981-03-17 1981-03-17 Semiconductor device Granted JPS57153488A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56038957A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device
US06/357,086 US4520485A (en) 1981-03-17 1982-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038957A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153488A true JPS57153488A (en) 1982-09-22
JPH0141261B2 JPH0141261B2 (enrdf_load_stackoverflow) 1989-09-04

Family

ID=12539659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038957A Granted JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153488A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121302A (ja) * 1982-12-27 1984-07-13 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン ミクロン以下の開口を有する光波ガイド、その製造方法及びそれを用いた光メモリ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893289A (enrdf_load_stackoverflow) * 1972-02-08 1973-12-03
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893289A (enrdf_load_stackoverflow) * 1972-02-08 1973-12-03
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121302A (ja) * 1982-12-27 1984-07-13 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン ミクロン以下の開口を有する光波ガイド、その製造方法及びそれを用いた光メモリ装置

Also Published As

Publication number Publication date
JPH0141261B2 (enrdf_load_stackoverflow) 1989-09-04

Similar Documents

Publication Publication Date Title
GB1437067A (en) Optical waveguide couplers
ATE17280T1 (de) Vorrichtung zum seitlichen einkoppeln von licht in einen glasfaser-lichtwellenleiter.
JPS61161759A (ja) 集積オプトエレクトロニクス・デバイス
EP0187979A3 (en) Monolithically integrated wdm demultiplexmodule and method of manufacturing such a module
DE3876109D1 (de) Monolithisch integrierte wellenleiter-fotodiodenkombination.
FR2423869A1 (fr) Dispositif semiconducteur electroluminescent a recyclage de photons
JPS57153488A (en) Semiconductor device
JPH03228032A (ja) 光方向性結合器
JPS55161201A (en) Light delay equalizer
JPS5749288A (en) Photo hybrid integrated circuit
JPS55157277A (en) Optical semiconductor device
JPS5680193A (en) Semiconductor laser device
JPS5642386A (en) Semiconductor photodetector
JPS5466157A (en) Photo switching and branching circuit
JPS54150990A (en) Semiconductor laser device and its manufacture
JPS54110858A (en) Optical guide type wavelength filter
JPS5518094A (en) Semiconductor laser device with high optical output and horizontal fundamental mode
JPS5793586A (en) Photocoupling interrupter
JPS5593274A (en) Photo-detector for optical integrated circuit
JPS6468735A (en) Waveguide type shg element
JPS54107351A (en) Composite photo coupling unit
JPS5652707A (en) Photo wavelength branching filter
JPS5736883A (ja) Handotaireeza
JPS5529841A (en) Light propagation device using optical fiber
JPS5728384A (en) Semiconductor laser