JPS57153467A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57153467A
JPS57153467A JP56037933A JP3793381A JPS57153467A JP S57153467 A JPS57153467 A JP S57153467A JP 56037933 A JP56037933 A JP 56037933A JP 3793381 A JP3793381 A JP 3793381A JP S57153467 A JPS57153467 A JP S57153467A
Authority
JP
Japan
Prior art keywords
layer
emitter layer
side emitter
insulated
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56037933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364907B2 (enrdf_load_stackoverflow
Inventor
Takahiro Nagano
Saburo Oikawa
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56037933A priority Critical patent/JPS57153467A/ja
Publication of JPS57153467A publication Critical patent/JPS57153467A/ja
Publication of JPS6364907B2 publication Critical patent/JPS6364907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP56037933A 1981-03-18 1981-03-18 Semiconductor device Granted JPS57153467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56037933A JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56037933A JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153467A true JPS57153467A (en) 1982-09-22
JPS6364907B2 JPS6364907B2 (enrdf_load_stackoverflow) 1988-12-14

Family

ID=12511352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56037933A Granted JPS57153467A (en) 1981-03-18 1981-03-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153467A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6099552U (ja) * 1983-12-12 1985-07-06 日本インター株式会社 ゲ−トタ−ンオフサイリスタ
JPS60182167A (ja) * 1984-01-31 1985-09-17 ウェスティングハウス　ブレイク　アンド　シグナル　ハウルディングス　リミテッド Ｇｔｏサイリスタ
JPS60189260A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 逆阻止型ゲートターンオフサイリスタ
JPS629669A (ja) * 1985-07-08 1987-01-17 Toshiba Corp ゲ−トタ−ンオフサイリスタ
US4868625A (en) * 1986-07-08 1989-09-19 Hitachi, Ltd. Gate turn-off thyristor of multi-emitter type
JPH02153569A (ja) * 1988-12-06 1990-06-13 Hitachi Ltd ゲートターンオフサイリスタの駆動方法
JPH02263470A (ja) * 1989-04-04 1990-10-26 Hitachi Ltd ゲートターンオフサイリスタ
EP3073530A1 (en) * 2015-03-23 2016-09-28 ABB Technology AG Reverse conducting power semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6099552U (ja) * 1983-12-12 1985-07-06 日本インター株式会社 ゲ−トタ−ンオフサイリスタ
JPS60182167A (ja) * 1984-01-31 1985-09-17 ウェスティングハウス　ブレイク　アンド　シグナル　ハウルディングス　リミテッド Ｇｔｏサイリスタ
JPS60189260A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 逆阻止型ゲートターンオフサイリスタ
JPS629669A (ja) * 1985-07-08 1987-01-17 Toshiba Corp ゲ−トタ−ンオフサイリスタ
US4868625A (en) * 1986-07-08 1989-09-19 Hitachi, Ltd. Gate turn-off thyristor of multi-emitter type
JPH02153569A (ja) * 1988-12-06 1990-06-13 Hitachi Ltd ゲートターンオフサイリスタの駆動方法
JPH02263470A (ja) * 1989-04-04 1990-10-26 Hitachi Ltd ゲートターンオフサイリスタ
EP3073530A1 (en) * 2015-03-23 2016-09-28 ABB Technology AG Reverse conducting power semiconductor device
KR20160113994A (ko) * 2015-03-23 2016-10-04 에이비비 슈바이쯔 아게 역 도통 전력 반도체 디바이스
US9543305B2 (en) 2015-03-23 2017-01-10 Abb Schweiz Ag Reverse conducting power semiconductor device

Also Published As

Publication number Publication date
JPS6364907B2 (enrdf_load_stackoverflow) 1988-12-14

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