JPS57153208A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPS57153208A JPS57153208A JP4137381A JP4137381A JPS57153208A JP S57153208 A JPS57153208 A JP S57153208A JP 4137381 A JP4137381 A JP 4137381A JP 4137381 A JP4137381 A JP 4137381A JP S57153208 A JPS57153208 A JP S57153208A
- Authority
- JP
- Japan
- Prior art keywords
- films
- quartz
- thicknesses
- resonator
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title abstract 2
- 239000010453 quartz Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 230000010355 oscillation Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
- G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
Abstract
PURPOSE:To monitor the thickness of the films formed on material surfaces in a chemical vapor growth device by disposing a quartz resonator part of a quartz oscillator within a reaction vessel and observing the change in the oscillation frequencies of the resonator in accordance with the thicknesses of the formed films. CONSTITUTION:Substrates 11 placed on a boat 12 are placed in a reaction tube 3 inserted into a side heating type heating furnace 1. The reacting gas from a gas lead-in port 4 enters the reaction tube and forms intended films on the substrate surfaces. A quartz resonator 17 is disposed in the reaction tube and is connected to an oscillation circuit 18 by means of a wiring 19, whereby a quartz oscillator 20 is constituted. The films by the reaction grow on the surfaces of the quartz resonator as well simultaneously on the substrate surfaces and in accordance with the thicknesses of the formed films, the resonance frequency change. Accordingly, it is possible to monitor the thicknesses of the formed films by observing the oscillation frequencies of the quartz resonator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4137381A JPS57153208A (en) | 1981-03-17 | 1981-03-17 | Chemical vapor growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4137381A JPS57153208A (en) | 1981-03-17 | 1981-03-17 | Chemical vapor growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57153208A true JPS57153208A (en) | 1982-09-21 |
Family
ID=12606613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4137381A Pending JPS57153208A (en) | 1981-03-17 | 1981-03-17 | Chemical vapor growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57153208A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02174411A (en) * | 1988-12-27 | 1990-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Crystal film thickness monitor |
WO2000077488A1 (en) * | 1999-06-15 | 2000-12-21 | Massachusetts Institute Of Technology | High-temperature balance |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739171A (en) * | 1980-08-20 | 1982-03-04 | Toshiba Corp | Film thickness monitoring apparatus in vapor deposition apparatus |
-
1981
- 1981-03-17 JP JP4137381A patent/JPS57153208A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739171A (en) * | 1980-08-20 | 1982-03-04 | Toshiba Corp | Film thickness monitoring apparatus in vapor deposition apparatus |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02174411A (en) * | 1988-12-27 | 1990-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Crystal film thickness monitor |
JPH0548304B2 (en) * | 1988-12-27 | 1993-07-21 | Nippon Telegraph & Telephone | |
WO2000077488A1 (en) * | 1999-06-15 | 2000-12-21 | Massachusetts Institute Of Technology | High-temperature balance |
US6370955B1 (en) | 1999-06-15 | 2002-04-16 | Massachusetts Institute Of Technology | High-temperature balance |
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