JPS57153208A - Chemical vapor growth device - Google Patents

Chemical vapor growth device

Info

Publication number
JPS57153208A
JPS57153208A JP4137381A JP4137381A JPS57153208A JP S57153208 A JPS57153208 A JP S57153208A JP 4137381 A JP4137381 A JP 4137381A JP 4137381 A JP4137381 A JP 4137381A JP S57153208 A JPS57153208 A JP S57153208A
Authority
JP
Japan
Prior art keywords
films
quartz
thicknesses
resonator
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4137381A
Other languages
Japanese (ja)
Inventor
Kazuo Mizuguchi
Hideo Kotani
Masahiko Denda
Yoshikazu Obayashi
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4137381A priority Critical patent/JPS57153208A/en
Publication of JPS57153208A publication Critical patent/JPS57153208A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/063Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
    • G01B7/066Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating

Abstract

PURPOSE:To monitor the thickness of the films formed on material surfaces in a chemical vapor growth device by disposing a quartz resonator part of a quartz oscillator within a reaction vessel and observing the change in the oscillation frequencies of the resonator in accordance with the thicknesses of the formed films. CONSTITUTION:Substrates 11 placed on a boat 12 are placed in a reaction tube 3 inserted into a side heating type heating furnace 1. The reacting gas from a gas lead-in port 4 enters the reaction tube and forms intended films on the substrate surfaces. A quartz resonator 17 is disposed in the reaction tube and is connected to an oscillation circuit 18 by means of a wiring 19, whereby a quartz oscillator 20 is constituted. The films by the reaction grow on the surfaces of the quartz resonator as well simultaneously on the substrate surfaces and in accordance with the thicknesses of the formed films, the resonance frequency change. Accordingly, it is possible to monitor the thicknesses of the formed films by observing the oscillation frequencies of the quartz resonator.
JP4137381A 1981-03-17 1981-03-17 Chemical vapor growth device Pending JPS57153208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4137381A JPS57153208A (en) 1981-03-17 1981-03-17 Chemical vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4137381A JPS57153208A (en) 1981-03-17 1981-03-17 Chemical vapor growth device

Publications (1)

Publication Number Publication Date
JPS57153208A true JPS57153208A (en) 1982-09-21

Family

ID=12606613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4137381A Pending JPS57153208A (en) 1981-03-17 1981-03-17 Chemical vapor growth device

Country Status (1)

Country Link
JP (1) JPS57153208A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174411A (en) * 1988-12-27 1990-07-05 Nippon Telegr & Teleph Corp <Ntt> Crystal film thickness monitor
WO2000077488A1 (en) * 1999-06-15 2000-12-21 Massachusetts Institute Of Technology High-temperature balance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739171A (en) * 1980-08-20 1982-03-04 Toshiba Corp Film thickness monitoring apparatus in vapor deposition apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739171A (en) * 1980-08-20 1982-03-04 Toshiba Corp Film thickness monitoring apparatus in vapor deposition apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174411A (en) * 1988-12-27 1990-07-05 Nippon Telegr & Teleph Corp <Ntt> Crystal film thickness monitor
JPH0548304B2 (en) * 1988-12-27 1993-07-21 Nippon Telegraph & Telephone
WO2000077488A1 (en) * 1999-06-15 2000-12-21 Massachusetts Institute Of Technology High-temperature balance
US6370955B1 (en) 1999-06-15 2002-04-16 Massachusetts Institute Of Technology High-temperature balance

Similar Documents

Publication Publication Date Title
Azumi et al. Novel finite pulse‐width correction in flash thermal diffusivity measurement
EP0343602A3 (en) Microwave plasma treating apparatus
JPS6450429A (en) Formation of insulating film
JPS57153208A (en) Chemical vapor growth device
KR960034479A (en) METHOD FOR MANUFACTING OXIDE FILM AND METHOD FOR PRODUCING THE SAME
JPS592374B2 (en) Plasma vapor phase growth equipment
JPS56116869A (en) Inductive reduced pressure gaseous phase method
JPS5741367A (en) Chemical vapor deposition device
JPS5536980A (en) Production of film by plasma reaction
JPS56138921A (en) Method of formation for impurity introduction layer
JPS5647569A (en) Plasma etching method
JPS5623736A (en) Vapor phase growing method
JPS5713738A (en) Vapor-phase growing apparatus
JPS55100993A (en) Supersonic plating
JPH04369833A (en) Thin film manufacturing method and device
JPS5467377A (en) Plasma processing apparatus
JPS5713746A (en) Vapor-phase growing apparatus
JPS55117321A (en) Crystal oscillator
JPS5732637A (en) Dry etching apparatus
JPH01120810A (en) Microwave plasma production device
JPS56108029A (en) High-frequency heater
JPS6446936A (en) Growth method of thin film
JPH064898Y2 (en) Plasma equipment
JPS6075575A (en) Chemical vapor phase plating apparatus
JPS5675565A (en) Manufacturing method of thin film