JPS5715271A - Memory device - Google Patents
Memory deviceInfo
- Publication number
- JPS5715271A JPS5715271A JP8878980A JP8878980A JPS5715271A JP S5715271 A JPS5715271 A JP S5715271A JP 8878980 A JP8878980 A JP 8878980A JP 8878980 A JP8878980 A JP 8878980A JP S5715271 A JPS5715271 A JP S5715271A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- significant digit
- address
- numbered
- digit bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Executing Machine-Instructions (AREA)
Abstract
PURPOSE:To obtain access to continuous contents once without reference to whether the addresses are even-numbered or odd-numbered, by settting a memory address except the least-significant digit bit in an address counter which counts and updates its contents according to the information of the least-significant digit bit of a register. CONSTITUTION:The memory device is provided with a memory consisting of memories 4 and 5 for even and odd addresses, an address register 2 holding its memory address and giving a memory address excluding its least-significant digit bit to the memory 5, and an address counter 3 wherein the memory address exlcluding the least-significant digit bit is set and whose count contents are updated according to information of the least-significant digit bit of the register 2. Consequently, access to the continuous content of the memory is completed by the simple constitution regardless of whether memory address are even-numbered or odd-numbered, thus increasing an access speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8878980A JPS5715271A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8878980A JPS5715271A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5715271A true JPS5715271A (en) | 1982-01-26 |
Family
ID=13952599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8878980A Pending JPS5715271A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5715271A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167137A (en) * | 1984-09-10 | 1986-04-07 | Hitachi Ltd | Microprogram control system |
US5261073A (en) * | 1989-05-05 | 1993-11-09 | Wang Laboratories, Inc. | Method and apparatus for providing memory system status signals |
US5307469A (en) * | 1989-05-05 | 1994-04-26 | Wang Laboratories, Inc. | Multiple mode memory module |
US5327391A (en) * | 1991-04-11 | 1994-07-05 | Nec Corporation | Double buffer type elastic store comprising a pair of data memory blocks |
EP0607942A2 (en) * | 1993-01-19 | 1994-07-27 | Kabushiki Kaisha Toshiba | Read only memory |
US5479393A (en) * | 1993-06-19 | 1995-12-26 | Samsung Electronics Co., Ltd. | Video ram having an option of a full sam and a half sam |
US6452825B1 (en) * | 1997-05-30 | 2002-09-17 | Micron Technology, Inc. | 256 meg dynamic random access memory having a programmable multiplexor |
US6564308B2 (en) | 1989-05-05 | 2003-05-13 | Samsung Electronics Co. Ltd. | Multiple mode memory module |
-
1980
- 1980-06-30 JP JP8878980A patent/JPS5715271A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167137A (en) * | 1984-09-10 | 1986-04-07 | Hitachi Ltd | Microprogram control system |
US5261073A (en) * | 1989-05-05 | 1993-11-09 | Wang Laboratories, Inc. | Method and apparatus for providing memory system status signals |
US5307469A (en) * | 1989-05-05 | 1994-04-26 | Wang Laboratories, Inc. | Multiple mode memory module |
US6021477A (en) * | 1989-05-05 | 2000-02-01 | Samsung Electronics Co., Ltd | Multiple mode memory module |
US6499093B2 (en) * | 1989-05-05 | 2002-12-24 | Samsung Electronics Co., Ltd. | Multiple mode memory module |
US6564308B2 (en) | 1989-05-05 | 2003-05-13 | Samsung Electronics Co. Ltd. | Multiple mode memory module |
US5327391A (en) * | 1991-04-11 | 1994-07-05 | Nec Corporation | Double buffer type elastic store comprising a pair of data memory blocks |
EP0607942A2 (en) * | 1993-01-19 | 1994-07-27 | Kabushiki Kaisha Toshiba | Read only memory |
EP0607942A3 (en) * | 1993-01-19 | 1994-08-24 | Toshiba Kk | Read only memory. |
US5479393A (en) * | 1993-06-19 | 1995-12-26 | Samsung Electronics Co., Ltd. | Video ram having an option of a full sam and a half sam |
US6452825B1 (en) * | 1997-05-30 | 2002-09-17 | Micron Technology, Inc. | 256 meg dynamic random access memory having a programmable multiplexor |
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