JPS57152179A - Manufacture of semiconductor laser device - Google Patents
Manufacture of semiconductor laser deviceInfo
- Publication number
- JPS57152179A JPS57152179A JP3756781A JP3756781A JPS57152179A JP S57152179 A JPS57152179 A JP S57152179A JP 3756781 A JP3756781 A JP 3756781A JP 3756781 A JP3756781 A JP 3756781A JP S57152179 A JPS57152179 A JP S57152179A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- laser device
- semiconductor laser
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3756781A JPS57152179A (en) | 1981-03-16 | 1981-03-16 | Manufacture of semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3756781A JPS57152179A (en) | 1981-03-16 | 1981-03-16 | Manufacture of semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57152179A true JPS57152179A (en) | 1982-09-20 |
| JPS6364915B2 JPS6364915B2 (enrdf_load_stackoverflow) | 1988-12-14 |
Family
ID=12501098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3756781A Granted JPS57152179A (en) | 1981-03-16 | 1981-03-16 | Manufacture of semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57152179A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238707A (ja) * | 1988-07-28 | 1990-02-08 | Sugiura Seisakusho:Kk | スタッドボルト |
-
1981
- 1981-03-16 JP JP3756781A patent/JPS57152179A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6364915B2 (enrdf_load_stackoverflow) | 1988-12-14 |
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