JPS57152137A - Semiconductor package and manufacture thereof - Google Patents

Semiconductor package and manufacture thereof

Info

Publication number
JPS57152137A
JPS57152137A JP56035430A JP3543081A JPS57152137A JP S57152137 A JPS57152137 A JP S57152137A JP 56035430 A JP56035430 A JP 56035430A JP 3543081 A JP3543081 A JP 3543081A JP S57152137 A JPS57152137 A JP S57152137A
Authority
JP
Japan
Prior art keywords
conductor
semiconductor chip
thermally
generated
coating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56035430A
Other languages
Japanese (ja)
Inventor
Junichi Saeki
Ataru Yokono
Aizo Kaneda
Yoshiaki Wakashima
Keizo Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56035430A priority Critical patent/JPS57152137A/en
Publication of JPS57152137A publication Critical patent/JPS57152137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
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    • H01L2224/7825—Means for applying energy, e.g. heating means
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    • H01L2224/8518—Translational movements
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Abstract

PURPOSE:To obtain a semiconductor package and the manufacturing method thereof enabled to eliminate generation of fault of short-circuit enhancing yield and reducing material cost by a method wherein a semiconductor chip and a lead frame are connected with an insulatedly covered conductor. CONSTITUTION:A material having the thermally decomposing temperature of 190-400 deg.C is used as the coating material. Accordingly although the material is decomposed to expose the conductor when thermal adhesion with pressure is performed, but thermal decomposition is not generated in the resin sealing process. The covered conductor 13 is constituted of a gold wire coated with urethane (thermally decomposing temperature is 360 deg.C), and no fault of short-circuit is generated because of the insulating effect of the coating material when the conductors contact with each other and even when contact with the semiconductor chip 2 is generated. When connection is to be performed, a capillary 16 adheres a ball 15 onto the semiconductor chip 2 thermally with pressure, and the covered conductor 13 to the lead frame 3, and by keeping the temperature at both cases at about 400 deg.C, the contacting parts of the coating material 14 are decomposed thermally to expose the conductor 1.
JP56035430A 1981-03-13 1981-03-13 Semiconductor package and manufacture thereof Pending JPS57152137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56035430A JPS57152137A (en) 1981-03-13 1981-03-13 Semiconductor package and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035430A JPS57152137A (en) 1981-03-13 1981-03-13 Semiconductor package and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57152137A true JPS57152137A (en) 1982-09-20

Family

ID=12441640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035430A Pending JPS57152137A (en) 1981-03-13 1981-03-13 Semiconductor package and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57152137A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0355955A2 (en) * 1988-07-25 1990-02-28 Hitachi, Ltd. Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549577A (en) * 1977-06-24 1979-01-24 Shinkawa Seisakusho Kk Semiconductor
JPS5617771A (en) * 1979-07-17 1981-02-19 Yamaha Motor Co Ltd Barhandle for vehicle

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549577A (en) * 1977-06-24 1979-01-24 Shinkawa Seisakusho Kk Semiconductor
JPS5617771A (en) * 1979-07-17 1981-02-19 Yamaha Motor Co Ltd Barhandle for vehicle

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0355955A2 (en) * 1988-07-25 1990-02-28 Hitachi, Ltd. Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same
EP0355955A3 (en) * 1988-07-25 1991-12-27 Hitachi, Ltd. Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding

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