JPS57147276A - Reverse conductive type semiconductor switching device - Google Patents

Reverse conductive type semiconductor switching device

Info

Publication number
JPS57147276A
JPS57147276A JP56031361A JP3136181A JPS57147276A JP S57147276 A JPS57147276 A JP S57147276A JP 56031361 A JP56031361 A JP 56031361A JP 3136181 A JP3136181 A JP 3136181A JP S57147276 A JPS57147276 A JP S57147276A
Authority
JP
Japan
Prior art keywords
region
thyristor
depletion layer
type
switching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56031361A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136270B2 (OSRAM
Inventor
Susumu Murakami
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56031361A priority Critical patent/JPS57147276A/ja
Publication of JPS57147276A publication Critical patent/JPS57147276A/ja
Publication of JPH0136270B2 publication Critical patent/JPH0136270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56031361A 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device Granted JPS57147276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56031361A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56031361A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS57147276A true JPS57147276A (en) 1982-09-11
JPH0136270B2 JPH0136270B2 (OSRAM) 1989-07-31

Family

ID=12329095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56031361A Granted JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS57147276A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JPS6098671A (ja) * 1983-11-02 1985-06-01 Toshiba Corp 複合型サイリスタ
JPS60143788U (ja) * 1984-03-05 1985-09-24 株式会社豊田自動織機製作所 流体噴射式織機における補助ノズルの高さ位置調整装置
JPH0445579A (ja) * 1990-06-12 1992-02-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0846178A (ja) * 1994-07-27 1996-02-16 Toyo Electric Mfg Co Ltd 自己消弧型逆導通サイリスタ
JPH08213591A (ja) * 1995-01-31 1996-08-20 Toyo Electric Mfg Co Ltd 埋込みゲート構造もしくは切込みゲート構造を有する逆導通サイリスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104067U (ja) * 1991-02-15 1992-09-08 日信工業株式会社 マスタシリンダ用リザーバ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967U (OSRAM) * 1971-06-24 1973-02-13
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967U (OSRAM) * 1971-06-24 1973-02-13
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JPS6098671A (ja) * 1983-11-02 1985-06-01 Toshiba Corp 複合型サイリスタ
JPS60143788U (ja) * 1984-03-05 1985-09-24 株式会社豊田自動織機製作所 流体噴射式織機における補助ノズルの高さ位置調整装置
JPH0445579A (ja) * 1990-06-12 1992-02-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0846178A (ja) * 1994-07-27 1996-02-16 Toyo Electric Mfg Co Ltd 自己消弧型逆導通サイリスタ
JPH08213591A (ja) * 1995-01-31 1996-08-20 Toyo Electric Mfg Co Ltd 埋込みゲート構造もしくは切込みゲート構造を有する逆導通サイリスタ

Also Published As

Publication number Publication date
JPH0136270B2 (OSRAM) 1989-07-31

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