JPS57143867A - Insulating gate type field-effect transistor and its manufacture - Google Patents
Insulating gate type field-effect transistor and its manufactureInfo
- Publication number
- JPS57143867A JPS57143867A JP2822781A JP2822781A JPS57143867A JP S57143867 A JPS57143867 A JP S57143867A JP 2822781 A JP2822781 A JP 2822781A JP 2822781 A JP2822781 A JP 2822781A JP S57143867 A JPS57143867 A JP S57143867A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- film
- section
- gate oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2822781A JPS57143867A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2822781A JPS57143867A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57143867A true JPS57143867A (en) | 1982-09-06 |
Family
ID=12242712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2822781A Pending JPS57143867A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57143867A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015152570A (ja) * | 2014-02-19 | 2015-08-24 | 富士電機株式会社 | 電圧検出回路 |
-
1981
- 1981-02-27 JP JP2822781A patent/JPS57143867A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015152570A (ja) * | 2014-02-19 | 2015-08-24 | 富士電機株式会社 | 電圧検出回路 |
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