JPS57143790A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS57143790A JPS57143790A JP56030214A JP3021481A JPS57143790A JP S57143790 A JPS57143790 A JP S57143790A JP 56030214 A JP56030214 A JP 56030214A JP 3021481 A JP3021481 A JP 3021481A JP S57143790 A JPS57143790 A JP S57143790A
- Authority
- JP
- Japan
- Prior art keywords
- area
- cell
- areas
- adjacent
- pmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 101710114762 50S ribosomal protein L11, chloroplastic Proteins 0.000 abstract 2
- 101710082414 50S ribosomal protein L12, chloroplastic Proteins 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56030214A JPS57143790A (en) | 1981-03-03 | 1981-03-03 | Semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56030214A JPS57143790A (en) | 1981-03-03 | 1981-03-03 | Semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57143790A true JPS57143790A (en) | 1982-09-06 |
JPS612301B2 JPS612301B2 (ja) | 1986-01-23 |
Family
ID=12297467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56030214A Granted JPS57143790A (en) | 1981-03-03 | 1981-03-03 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57143790A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011166722A (ja) * | 2009-07-24 | 2011-08-25 | Minebea Co Ltd | スピーカ |
-
1981
- 1981-03-03 JP JP56030214A patent/JPS57143790A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011166722A (ja) * | 2009-07-24 | 2011-08-25 | Minebea Co Ltd | スピーカ |
Also Published As
Publication number | Publication date |
---|---|
JPS612301B2 (ja) | 1986-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY104092A (en) | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor. | |
DE3381528D1 (de) | Halbleiterspeicheranordnung mit mehreren ladungsspeichertypzellen. | |
JPS56137589A (en) | Semiconductor storage device | |
DE3568911D1 (en) | A semiconductor memory device comprising a matrix of six-transistor memory cells with a pair of cmos inverters | |
DE3070056D1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
JPS52142442A (en) | Memory circuit | |
JPS53108392A (en) | Semiconductor device | |
GB2078443B (en) | Fabricating memory cells in semiconductor integrated circuits | |
EP0027565A3 (en) | Dynamic memory cell with two complementary bipolar transistors | |
DE3176927D1 (en) | Integrated semiconductor memory matrix using one-fet cells | |
JPS57143790A (en) | Semiconductor storage device | |
JPS51148385A (en) | Semiconductor memory cell | |
JPS5345940A (en) | Semiconductor memory unit | |
JPS56101770A (en) | Semiconductor memory device | |
JPS538074A (en) | Mis type semiconductor device | |
JPS52107786A (en) | Integrating circuit | |
JPS53132281A (en) | Semiconductor memory device | |
JPS5782288A (en) | Dynamic memory | |
JPS56111256A (en) | Semiconductor memory device | |
JPS52155927A (en) | Mos random access memory | |
DE3065534D1 (en) | Semiconductor memory device with multi-emitter transistor cells | |
JPS5377476A (en) | Semiconductor integrated circuit device | |
JPS5417681A (en) | Manufacture of semiconductor memory device | |
JPS5661158A (en) | Cmos random access memory | |
JPS52112754A (en) | Mos transistor constant-voltage circuit |