JPS57143790A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57143790A
JPS57143790A JP56030214A JP3021481A JPS57143790A JP S57143790 A JPS57143790 A JP S57143790A JP 56030214 A JP56030214 A JP 56030214A JP 3021481 A JP3021481 A JP 3021481A JP S57143790 A JPS57143790 A JP S57143790A
Authority
JP
Japan
Prior art keywords
area
cell
areas
adjacent
pmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56030214A
Other languages
English (en)
Other versions
JPS612301B2 (ja
Inventor
Masami Masuda
Kiyobumi Ochii
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56030214A priority Critical patent/JPS57143790A/ja
Publication of JPS57143790A publication Critical patent/JPS57143790A/ja
Publication of JPS612301B2 publication Critical patent/JPS612301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56030214A 1981-03-03 1981-03-03 Semiconductor storage device Granted JPS57143790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56030214A JPS57143790A (en) 1981-03-03 1981-03-03 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56030214A JPS57143790A (en) 1981-03-03 1981-03-03 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57143790A true JPS57143790A (en) 1982-09-06
JPS612301B2 JPS612301B2 (ja) 1986-01-23

Family

ID=12297467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56030214A Granted JPS57143790A (en) 1981-03-03 1981-03-03 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57143790A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166722A (ja) * 2009-07-24 2011-08-25 Minebea Co Ltd スピーカ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166722A (ja) * 2009-07-24 2011-08-25 Minebea Co Ltd スピーカ

Also Published As

Publication number Publication date
JPS612301B2 (ja) 1986-01-23

Similar Documents

Publication Publication Date Title
MY104092A (en) Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor.
DE3381528D1 (de) Halbleiterspeicheranordnung mit mehreren ladungsspeichertypzellen.
JPS56137589A (en) Semiconductor storage device
DE3568911D1 (en) A semiconductor memory device comprising a matrix of six-transistor memory cells with a pair of cmos inverters
DE3070056D1 (en) Semiconductor memory device including integrated injection logic memory cells
JPS52142442A (en) Memory circuit
JPS53108392A (en) Semiconductor device
GB2078443B (en) Fabricating memory cells in semiconductor integrated circuits
EP0027565A3 (en) Dynamic memory cell with two complementary bipolar transistors
DE3176927D1 (en) Integrated semiconductor memory matrix using one-fet cells
JPS57143790A (en) Semiconductor storage device
JPS51148385A (en) Semiconductor memory cell
JPS5345940A (en) Semiconductor memory unit
JPS56101770A (en) Semiconductor memory device
JPS538074A (en) Mis type semiconductor device
JPS52107786A (en) Integrating circuit
JPS53132281A (en) Semiconductor memory device
JPS5782288A (en) Dynamic memory
JPS56111256A (en) Semiconductor memory device
JPS52155927A (en) Mos random access memory
DE3065534D1 (en) Semiconductor memory device with multi-emitter transistor cells
JPS5377476A (en) Semiconductor integrated circuit device
JPS5417681A (en) Manufacture of semiconductor memory device
JPS5661158A (en) Cmos random access memory
JPS52112754A (en) Mos transistor constant-voltage circuit