JPS57138127A - Manufacture of gallium arsenide epitaxial wafer - Google Patents

Manufacture of gallium arsenide epitaxial wafer

Info

Publication number
JPS57138127A
JPS57138127A JP56022230A JP2223081A JPS57138127A JP S57138127 A JPS57138127 A JP S57138127A JP 56022230 A JP56022230 A JP 56022230A JP 2223081 A JP2223081 A JP 2223081A JP S57138127 A JPS57138127 A JP S57138127A
Authority
JP
Japan
Prior art keywords
wafer
layer
epitaxial growth
post
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56022230A
Other languages
Japanese (ja)
Other versions
JPS6347136B2 (en
Inventor
Tokuji Tanaka
Takashi Udagawa
Takatoshi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56022230A priority Critical patent/JPS57138127A/en
Publication of JPS57138127A publication Critical patent/JPS57138127A/en
Publication of JPS6347136B2 publication Critical patent/JPS6347136B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To prevent the generation of a low electron concentration region in the interface of a growth layer, and to improve quality by washing the inside of a reaction vessel, in which a post epitaxial layer is shaped to the GaAs epitaxial wafer, with an acidic liquid and treating the wafer at a high temperature in hydrogen or an inert gas. CONSTITUTION:An n<-> active layer 12 having 10<15>cm<-3> electron concentration is formed discontinuously through pre-epitaxial growth and an n<+> layer 13 through post epitaxial growth to the low resistance n type GaAs wafer 11 as a substrate preparing an appliance such as a gun diode, and the wafer is used. Extraneous matter in the reaction vessel 49 is dissolved with nitrohydrochloric acid prior to the post epitaxial growth, and washed with pure water, fluoric acid and pure water. The wafer is dried, the vessel 49 is set without mounting the wafer, a gas such as hydrogen refind at high purity is flowed, and the wafer is heated for fourty min at 850 deg.C. The wafer 412 is placed, and post epitaxial growth is conducted at a tmperature such as 600-720 deg.C while using organic gallium and arsine as reaction gases. Accordingly, the electronic concentration, the controllability of the thickness and the reproducibility of the epitaxial layer can be improved, and the scattering, etc. of the threshold value of the gun diode can be removed.
JP56022230A 1981-02-19 1981-02-19 Manufacture of gallium arsenide epitaxial wafer Granted JPS57138127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56022230A JPS57138127A (en) 1981-02-19 1981-02-19 Manufacture of gallium arsenide epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56022230A JPS57138127A (en) 1981-02-19 1981-02-19 Manufacture of gallium arsenide epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS57138127A true JPS57138127A (en) 1982-08-26
JPS6347136B2 JPS6347136B2 (en) 1988-09-20

Family

ID=12076988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56022230A Granted JPS57138127A (en) 1981-02-19 1981-02-19 Manufacture of gallium arsenide epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS57138127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103890A (en) * 1985-10-31 1987-05-14 Fujitsu Ltd Method for coating lubricant on disc medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103890A (en) * 1985-10-31 1987-05-14 Fujitsu Ltd Method for coating lubricant on disc medium

Also Published As

Publication number Publication date
JPS6347136B2 (en) 1988-09-20

Similar Documents

Publication Publication Date Title
JPS57138127A (en) Manufacture of gallium arsenide epitaxial wafer
El Jani et al. In situ etching of GaAs using AsCl3 in MOVPE. I
JPS5453975A (en) Manufacture for gallium phosphide green light emitting element
JPS5214708A (en) Process for preparation of choline chloride
JPS56100410A (en) Gallium arsenide crystal of low defect density and semi-insulation
JPS6422024A (en) Vapor growth method
Penna et al. A study of the growth of high-purity InGaAs by conventional LPE
JPS5698823A (en) Method of vapor growth of semiconductor of 3-5 group compound
JPS5660013A (en) Diffusion of gallium
JPS5547381A (en) Plasma etching method
JPS5646538A (en) Manufacture of compound semiconductor device
JPS551137A (en) Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS55120129A (en) Method for gaseous-phase growth of semiconductor
JPS5698822A (en) Method of vapor growth of semiconductor of chrome added 3-5 group compound
JPS5740921A (en) Diffusion of gallium
JPS5698821A (en) Method of vapor growth of semiconductor of chrome added 3-5 group compound
JPS56112720A (en) Supperssion of thermal denaturation of compound semiconductor
JPS57109323A (en) Plasma chemical vapor-phase growing method
JPS54110987A (en) Gaseous growing of semiconductor
JPS5382163A (en) Semiconductor vapor phase growth method
ATE80498T1 (en) MATERIAL-SAVING PROCESS FOR THE MANUFACTURE OF MIXED CRYSTALS.
JPS55140799A (en) Gallium nitride crystal growing method
JPS5556624A (en) Aqueous phase epitaxial growing method
JPS57134936A (en) Forming method of insulation film on compound semiconductor
JPS5643735A (en) Manufacture of semiconductor device