JPS5698822A - Method of vapor growth of semiconductor of chrome added 3-5 group compound - Google Patents

Method of vapor growth of semiconductor of chrome added 3-5 group compound

Info

Publication number
JPS5698822A
JPS5698822A JP117980A JP117980A JPS5698822A JP S5698822 A JPS5698822 A JP S5698822A JP 117980 A JP117980 A JP 117980A JP 117980 A JP117980 A JP 117980A JP S5698822 A JPS5698822 A JP S5698822A
Authority
JP
Japan
Prior art keywords
chrome
added
vapor growth
gas
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP117980A
Other languages
Japanese (ja)
Inventor
Masaji Yoshida
Hiroshi Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP117980A priority Critical patent/JPS5698822A/en
Publication of JPS5698822A publication Critical patent/JPS5698822A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a vapor growth of a semiconductor of a III-V group compound wherein a chrome is added or a mixed crystal thereof by adding the Cr as an iodide into a reaction gas. CONSTITUTION:A semi-insulating GaAs substrate 1 is placed on a stand 2 to substitute a reaction tube with an H2. Then, keeping a Ga source 5 saturated with As, a Cr 6 and the substrate 1 at the temperature of 850 deg., 850 deg. and 750 deg.C respectively, an H2 gss 7 including AsCl2, H2 including 1 and an H2 gas 9 are introduced into the reaction tube to obtain the vapor growth of the chrome addition GaAs on the substrate. Then, the n<+>-GaAs is laminated exchanging the gas 8 and the gas 9 to H2 and H2 including H2S respectively. By this method, since the chrome is added into the reaction gas as a volatile iodide, the semiconductor having a semi-insulating characteristic of the III-V group compound wherein the chrome is added therein or its mixture crystal is surely formed by the aid of a vapor growth without deposition of the chrome compound at the side path of inside the tube. The GaAs device thus obtained has a uniform characteristic and is high in yield. Further, in any halogen compound other than iodine, necessary Cr can not be added into the reaction gas.
JP117980A 1980-01-09 1980-01-09 Method of vapor growth of semiconductor of chrome added 3-5 group compound Pending JPS5698822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP117980A JPS5698822A (en) 1980-01-09 1980-01-09 Method of vapor growth of semiconductor of chrome added 3-5 group compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP117980A JPS5698822A (en) 1980-01-09 1980-01-09 Method of vapor growth of semiconductor of chrome added 3-5 group compound

Publications (1)

Publication Number Publication Date
JPS5698822A true JPS5698822A (en) 1981-08-08

Family

ID=11494213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP117980A Pending JPS5698822A (en) 1980-01-09 1980-01-09 Method of vapor growth of semiconductor of chrome added 3-5 group compound

Country Status (1)

Country Link
JP (1) JPS5698822A (en)

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