JPS57134979A - Light-emitting semiconductor device - Google Patents

Light-emitting semiconductor device

Info

Publication number
JPS57134979A
JPS57134979A JP1990081A JP1990081A JPS57134979A JP S57134979 A JPS57134979 A JP S57134979A JP 1990081 A JP1990081 A JP 1990081A JP 1990081 A JP1990081 A JP 1990081A JP S57134979 A JPS57134979 A JP S57134979A
Authority
JP
Japan
Prior art keywords
light
electrode
emitting semiconductor
transparent
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990081A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP1990081A priority Critical patent/JPS57134979A/en
Priority to US06/347,359 priority patent/US4527179A/en
Publication of JPS57134979A publication Critical patent/JPS57134979A/en
Priority to US07/056,313 priority patent/US4868614A/en
Priority to US07/281,957 priority patent/US4984034A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Abstract

PURPOSE:To emit light created at a semiconductor layer efficiently, by making transparent substrate and first electrode for a light-emitting semiconductor device which provides a light-emitting semiconductor layer on the first electrode on a substrate and the second electrode on it. CONSTITUTION:A transparent insulator 1 made of glass, ceramics, plastics, and the like is coated with tin oxide, indium oxide, antimony oxide, and the like by vacuum evaporation or gas-phase growth. A transparent electrode 20 is formed by etching selectively in an appropriate shape. Next, silane, silicon quadfluoride and other fluoride gas are dissolved by glow discharge. Nonsingle crystal semiconductor layers 11, 12, 15, 14, 13 to make a light-emitting semiconductor are formed continuously in the same reaction furnace. Next, a light-emitting semiconductor is left on the transparent electrode 20 and other parts are removed by etching. An insulator 19 of nitride protects the surrounding of the light-emitting semiconductor. Finally an electrode 18 is attached, a wiring 33 is formed as necessary, and the light-emitting element is completed.
JP1990081A 1981-02-09 1981-02-13 Light-emitting semiconductor device Pending JPS57134979A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1990081A JPS57134979A (en) 1981-02-13 1981-02-13 Light-emitting semiconductor device
US06/347,359 US4527179A (en) 1981-02-09 1982-02-09 Non-single-crystal light emitting semiconductor device
US07/056,313 US4868614A (en) 1981-02-09 1987-05-29 Light emitting semiconductor device matrix with non-single-crystalline semiconductor
US07/281,957 US4984034A (en) 1981-02-09 1988-12-05 Non-single-crystalline light emitting semiconductor device matrix with insulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990081A JPS57134979A (en) 1981-02-13 1981-02-13 Light-emitting semiconductor device

Publications (1)

Publication Number Publication Date
JPS57134979A true JPS57134979A (en) 1982-08-20

Family

ID=12012071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990081A Pending JPS57134979A (en) 1981-02-09 1981-02-13 Light-emitting semiconductor device

Country Status (1)

Country Link
JP (1) JPS57134979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631664A (en) * 1992-09-18 1997-05-20 Olympus Optical Co., Ltd. Display system utilizing electron emission by polarization reversal of ferroelectric material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631664A (en) * 1992-09-18 1997-05-20 Olympus Optical Co., Ltd. Display system utilizing electron emission by polarization reversal of ferroelectric material

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