JPS57134938A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57134938A
JPS57134938A JP56021155A JP2115581A JPS57134938A JP S57134938 A JPS57134938 A JP S57134938A JP 56021155 A JP56021155 A JP 56021155A JP 2115581 A JP2115581 A JP 2115581A JP S57134938 A JPS57134938 A JP S57134938A
Authority
JP
Japan
Prior art keywords
layer
groove
shallower
etching
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56021155A
Other languages
Japanese (ja)
Inventor
Takeshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56021155A priority Critical patent/JPS57134938A/en
Publication of JPS57134938A publication Critical patent/JPS57134938A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To raise a breakdown voltage and decrease a leak current by providing the second groove that is shallower than the first and the second layers and extending from the first layer to the first groove. CONSTITUTION:In manufacture of such as a diode, the first layer 2 and the second layer 3 of a p type diffusion layer are formed at distance at the same time on an n type semiconductor substrate 1. The second groove 6 is made by etching with its end reaching the first layer 2 and wider than the first groove 4 and shallower than the second layer 3. A glass layer 5 is deposited on the first groove 4 and the second groove 6. Defects on the main surface of the semiconductor substrate are removed by etching, raising the breakdown voltage and at the same time decreasing a leak current.
JP56021155A 1981-02-13 1981-02-13 Semiconductor device Pending JPS57134938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56021155A JPS57134938A (en) 1981-02-13 1981-02-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56021155A JPS57134938A (en) 1981-02-13 1981-02-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57134938A true JPS57134938A (en) 1982-08-20

Family

ID=12047009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56021155A Pending JPS57134938A (en) 1981-02-13 1981-02-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57134938A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en) * 1974-01-11 1975-08-22
JPS5516474A (en) * 1978-07-21 1980-02-05 Nec Corp Method of manufacturing semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en) * 1974-01-11 1975-08-22
JPS5516474A (en) * 1978-07-21 1980-02-05 Nec Corp Method of manufacturing semiconductor element

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