JPS57133664A - Semiconductor element and manufacture thereof - Google Patents

Semiconductor element and manufacture thereof

Info

Publication number
JPS57133664A
JPS57133664A JP56019439A JP1943981A JPS57133664A JP S57133664 A JPS57133664 A JP S57133664A JP 56019439 A JP56019439 A JP 56019439A JP 1943981 A JP1943981 A JP 1943981A JP S57133664 A JPS57133664 A JP S57133664A
Authority
JP
Japan
Prior art keywords
films
layers
diffused
electrode
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56019439A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147900B2 (en, 2012
Inventor
Shigeo Shibata
Hirohiko Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56019439A priority Critical patent/JPS57133664A/ja
Publication of JPS57133664A publication Critical patent/JPS57133664A/ja
Publication of JPH0147900B2 publication Critical patent/JPH0147900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56019439A 1981-02-12 1981-02-12 Semiconductor element and manufacture thereof Granted JPS57133664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56019439A JPS57133664A (en) 1981-02-12 1981-02-12 Semiconductor element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56019439A JPS57133664A (en) 1981-02-12 1981-02-12 Semiconductor element and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57133664A true JPS57133664A (en) 1982-08-18
JPH0147900B2 JPH0147900B2 (en, 2012) 1989-10-17

Family

ID=11999320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56019439A Granted JPS57133664A (en) 1981-02-12 1981-02-12 Semiconductor element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57133664A (en, 2012)

Also Published As

Publication number Publication date
JPH0147900B2 (en, 2012) 1989-10-17

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