JPS57133623A - Vapor-phase reactor - Google Patents

Vapor-phase reactor

Info

Publication number
JPS57133623A
JPS57133623A JP1810981A JP1810981A JPS57133623A JP S57133623 A JPS57133623 A JP S57133623A JP 1810981 A JP1810981 A JP 1810981A JP 1810981 A JP1810981 A JP 1810981A JP S57133623 A JPS57133623 A JP S57133623A
Authority
JP
Japan
Prior art keywords
susceptor
pipe
nozzles
gas injection
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1810981A
Other languages
Japanese (ja)
Inventor
Masataka Nomura
Hideo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1810981A priority Critical patent/JPS57133623A/en
Publication of JPS57133623A publication Critical patent/JPS57133623A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To equalize the thickness of the grown film of the subject reactor by a method wherein, in the reactor provided with a plurality of nozzles to be used for reaction gas injection on the upper part of a truncated pyramidal material whereon a plurality of the materials to be processed are adhered on the circumferential surface, while the gas injection is temporarily stopped before and after the edge part of the susceptor circumferential surface crosses the point directly below the nozzles, and carrier gas for prevention of pressure fluctuation is brought in. CONSTITUTION:A hexagonal truncated cone-shaped susceptor 2 is rotatably installed on a base stand 1, the radial supporting pipe 9 with a number of nozzles 10 is provided at the upper part of the base stand and reaction gas is brought in from the feed pipe 8 which is passing through the rotating shaft 3 of the susceptor 2. Also, decompression preventing pipe 18 which is penetrating the feed pipe 8 is protruded upward and surrounded by the transparent quartz bell jar 11 having an inflared ray lamp 15 and a reflecting plate 16. After the subject rector has been constituted as above, a wafer is adhered on the side face of the susceptor 2, gas injection is temporarily stopped when the edge part of the susceptor 2 is positioned at a point directly below the nozzle 10, and the inside pressure of the bell jar 11 is stabilized by feeding H2 gas from the pipe 18.
JP1810981A 1981-02-12 1981-02-12 Vapor-phase reactor Pending JPS57133623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1810981A JPS57133623A (en) 1981-02-12 1981-02-12 Vapor-phase reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1810981A JPS57133623A (en) 1981-02-12 1981-02-12 Vapor-phase reactor

Publications (1)

Publication Number Publication Date
JPS57133623A true JPS57133623A (en) 1982-08-18

Family

ID=11962443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1810981A Pending JPS57133623A (en) 1981-02-12 1981-02-12 Vapor-phase reactor

Country Status (1)

Country Link
JP (1) JPS57133623A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678956A1 (en) * 1991-07-12 1993-01-15 Pechiney Recherche DEVICE AND METHOD FOR DEPOSITING DIAMOND BY DCPV ASSISTED BY MICROWAVE PLASMA.
CN112635303A (en) * 2020-12-30 2021-04-09 吴银雪 Preparation process of silicon carbide semiconductor material capable of being produced in large scale

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678956A1 (en) * 1991-07-12 1993-01-15 Pechiney Recherche DEVICE AND METHOD FOR DEPOSITING DIAMOND BY DCPV ASSISTED BY MICROWAVE PLASMA.
US5360485A (en) * 1991-07-12 1994-11-01 Pechiney Recherche Apparatus for diamond deposition by microwave plasma-assisted CVPD
CN112635303A (en) * 2020-12-30 2021-04-09 吴银雪 Preparation process of silicon carbide semiconductor material capable of being produced in large scale

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