JPS5713177A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5713177A
JPS5713177A JP8459080A JP8459080A JPS5713177A JP S5713177 A JPS5713177 A JP S5713177A JP 8459080 A JP8459080 A JP 8459080A JP 8459080 A JP8459080 A JP 8459080A JP S5713177 A JPS5713177 A JP S5713177A
Authority
JP
Japan
Prior art keywords
sio2 film
cooled
inlet
maskless
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8459080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328993B2 (enrdf_load_stackoverflow
Inventor
Haruo Okano
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8459080A priority Critical patent/JPS5713177A/ja
Publication of JPS5713177A publication Critical patent/JPS5713177A/ja
Publication of JPS6328993B2 publication Critical patent/JPS6328993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
JP8459080A 1980-06-24 1980-06-24 Etching method Granted JPS5713177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8459080A JPS5713177A (en) 1980-06-24 1980-06-24 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8459080A JPS5713177A (en) 1980-06-24 1980-06-24 Etching method

Publications (2)

Publication Number Publication Date
JPS5713177A true JPS5713177A (en) 1982-01-23
JPS6328993B2 JPS6328993B2 (enrdf_load_stackoverflow) 1988-06-10

Family

ID=13834882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8459080A Granted JPS5713177A (en) 1980-06-24 1980-06-24 Etching method

Country Status (1)

Country Link
JP (1) JPS5713177A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529475A (en) * 1983-05-31 1985-07-16 Kabushiki Kaisha Toshiba Dry etching apparatus and method using reactive gases
JPS6277485A (ja) * 1985-07-15 1987-04-09 テキサス　インスツルメンツ　インコ−ポレイテツド 酸化シリコン薄膜のエツチング方法
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
CN110648891A (zh) * 2019-09-20 2020-01-03 吴建湘 一种等离子刻蚀机用二氧化硅去除组件

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529475A (en) * 1983-05-31 1985-07-16 Kabushiki Kaisha Toshiba Dry etching apparatus and method using reactive gases
JPS6277485A (ja) * 1985-07-15 1987-04-09 テキサス　インスツルメンツ　インコ−ポレイテツド 酸化シリコン薄膜のエツチング方法
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
CN110648891A (zh) * 2019-09-20 2020-01-03 吴建湘 一种等离子刻蚀机用二氧化硅去除组件
CN110648891B (zh) * 2019-09-20 2022-02-15 湖北中培电子科技有限公司 一种等离子刻蚀机用二氧化硅去除组件

Also Published As

Publication number Publication date
JPS6328993B2 (enrdf_load_stackoverflow) 1988-06-10

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