JPS5713175A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS5713175A
JPS5713175A JP8399680A JP8399680A JPS5713175A JP S5713175 A JPS5713175 A JP S5713175A JP 8399680 A JP8399680 A JP 8399680A JP 8399680 A JP8399680 A JP 8399680A JP S5713175 A JPS5713175 A JP S5713175A
Authority
JP
Japan
Prior art keywords
anode
protrusion
cathode
semiconductor element
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8399680A
Other languages
Japanese (ja)
Inventor
Yasuhiro Horiike
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8399680A priority Critical patent/JPS5713175A/en
Publication of JPS5713175A publication Critical patent/JPS5713175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To elongate the lifetime of an anode in the maskless selective etching of a semiconductor element, etc. with an ionized gas contg. a halogen element by cooling the anode protrusion. CONSTITUTION:Several KV voltage is applied between an anode protrusion 5 and a cathode 6 arranged in a bell jar 11, and simultaneously a gas contg. C and a halogen element such as CF4 is introduced into the jar 11 from the inlet 12 under about 10<-2> Torr pressure. Ions of the gaseous CF4 are generated at the tip of the protrusion 5, accelerated and deflected with the cathode 6 and electron lens systems 7, 8, 9, and irradiated on a semiconductor element 14 to etch the element 14. At this time, the protrusion 5 is cooled with a heat sink 4 holding liq. nitrogen 1 through an electrically insulating material 2 with superior heat conductivity, whereby intense ion beams are generated constantly and the life of the anode is elongated.
JP8399680A 1980-06-23 1980-06-23 Ion etching method Pending JPS5713175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8399680A JPS5713175A (en) 1980-06-23 1980-06-23 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399680A JPS5713175A (en) 1980-06-23 1980-06-23 Ion etching method

Publications (1)

Publication Number Publication Date
JPS5713175A true JPS5713175A (en) 1982-01-23

Family

ID=13818137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399680A Pending JPS5713175A (en) 1980-06-23 1980-06-23 Ion etching method

Country Status (1)

Country Link
JP (1) JPS5713175A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174323A (en) * 1987-01-13 1988-07-18 Nec Corp Ultrafine processing method using field ionization type reactive gas ion source
JPS6489473A (en) * 1987-09-30 1989-04-03 Toshiba Corp Semiconductor light emitting element and manufacture thereof
JPH01140742A (en) * 1987-11-27 1989-06-01 Hitachi Ltd Ion beam processing
JPH02159048A (en) * 1988-12-13 1990-06-19 Tokyo Electron Ltd Inspection method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174323A (en) * 1987-01-13 1988-07-18 Nec Corp Ultrafine processing method using field ionization type reactive gas ion source
JPS6489473A (en) * 1987-09-30 1989-04-03 Toshiba Corp Semiconductor light emitting element and manufacture thereof
JPH01140742A (en) * 1987-11-27 1989-06-01 Hitachi Ltd Ion beam processing
JPH02159048A (en) * 1988-12-13 1990-06-19 Tokyo Electron Ltd Inspection method

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