JPH02159048A - Inspection method - Google Patents
Inspection methodInfo
- Publication number
- JPH02159048A JPH02159048A JP31284188A JP31284188A JPH02159048A JP H02159048 A JPH02159048 A JP H02159048A JP 31284188 A JP31284188 A JP 31284188A JP 31284188 A JP31284188 A JP 31284188A JP H02159048 A JPH02159048 A JP H02159048A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- passivation film
- inspected
- chip
- inspection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 12
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 10
- 239000000523 sample Substances 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000005070 sampling Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- -1 mechanical damage Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
光肌災几煎
（産業上の利用分野）
本発明は、パッシベーション膜処理をしたＩＣチップ等
の被検査体の検査方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for inspecting an object to be inspected, such as an IC chip treated with a passivation film.
（従来の技術）
従来、ＩＣチップ内の波形４１す定を行う場合は、パッ
シベーション処理を行わない状態で組み立てたＩＣチッ
プやウェハを使用するか、或は既にパッシベーション膜
を処理済みのＩＣチップやウェハに関しては、プラズマ
エラチャ等によりパッシベーション膜を全面に除去する
必要があり、全面除去した後に初めて波形Ａ１１１定が
可能であった。(Prior Art) Conventionally, when determining the waveform 41 in an IC chip, IC chips or wafers assembled without passivation treatment are used, or IC chips or wafers that have already been treated with a passivation film are used. As for the wafer, it was necessary to remove the passivation film from the entire surface using plasma erasure or the like, and the waveform A111 could only be determined after the entire surface was removed.
特に、組み立てたＩＣが不良品と判断され、そのＩＣチ
ップ内部の不良個所を検査する場合にはＩＣチップのパ
ッシベーション膜を全面にわたって除去し、その後マニ
ュアルプローバのプローブ針で微細パターンにコンタク
トして検査するのが通常の方法であった。In particular, when an assembled IC is judged to be defective and the defective part inside the IC chip is to be inspected, the passivation film of the IC chip is removed over the entire surface, and then the probe needle of a manual prober is contacted to the fine pattern for inspection. The usual method was to do so.
（発明が解決しようとする課題）
しかし、パッシベーション膜を施していない場合は特に
問題はないが、膜処理後において検査する場合は、被検
査位置以外まで全表面を全て除去しなければならないの
で、工程の負担となっていた。特に、第３図に示すよう
に、部分的にＩＣチップ１１のアルミパターン１２を検
査する場合は、低容量の微細針１３をアルミパターン１
２にコンタクトして行うので、微細針１３がアルミパタ
ーン１２−ヒを横滑りしてしまい不安定な検査を余儀無
くされている実情にあった。(Problem to be Solved by the Invention) However, there is no particular problem when no passivation film is applied, but when inspecting after film processing, the entire surface must be removed except for the position to be inspected. It was a burden on the process. In particular, when partially inspecting the aluminum pattern 12 of the IC chip 11 as shown in FIG.
2, the fine needle 13 slides sideways on the aluminum pattern 12-1, resulting in unstable inspection.
本発明は、上記の実情に鑑みて開発したものであり、パ
ッシベーション膜の被検査位置のみを迅速に除去するよ
うにしてこの位置より確実に、かつ安定した検査ができ
得るようにすることを目的としている。The present invention was developed in view of the above-mentioned circumstances, and an object thereof is to rapidly remove only the position of the passivation film to be inspected, thereby enabling reliable and stable inspection from this position. It is said that
づでＬｌす１−ｎユもＶ
（課題を解決するための手段）
Ｉ〕記の１−１的を達成するため、本発明は、パッシベ
ーション膜処理を施した被検査体において、この被検査
体の少なくとも被検査位置を被覆しているパッシベーシ
ョン膜を除去して開口部を設け、この間］」部より電気
的検査を行うようにしたパッシベーション膜付き被検査
体の検査方法である。(Means for Solving the Problems) In order to achieve objective 1-1 of I), the present invention provides a test object that has been subjected to a passivation film treatment. This is a method for inspecting an object to be inspected with a passivation film, in which the passivation film covering at least the area to be inspected of the body is removed to form an opening, and electrical inspection is performed from the opening between the openings.
また、膜除去手段として、集束イオンビーム手段を採用
し、この手段により上記の開口部を形成するようにして
も良い。Further, a focused ion beam means may be employed as the film removing means, and the above-mentioned opening may be formed by this means.
更に、上記の開口部より低容量のプローブ針をコンタク
トして波形測定等の検査をする検査方法である。Furthermore, this is an inspection method in which a probe needle of low capacitance is brought into contact with the above-mentioned opening to perform inspections such as waveform measurement.
（作 用）
従って５本発明によると、パッシベーション膜処理を施
したＩＣチップ等の被検査体の内部を部分的に検査する
場合、集束イオンビーム手段により、当該位置のパッシ
ベーション膜を例えば３〜５μ【」程度除去して開［」
部を形成し、この開口部より波形採取等の検査を行うこ
とができる。(Function) Therefore, according to the present invention, when partially inspecting the inside of an object to be inspected such as an IC chip that has been subjected to a passivation film treatment, the passivation film at the relevant position is, for example, 3 to 5 μm thick by the focused ion beam means. ['' Remove and open [''
It is possible to perform inspections such as waveform collection through this opening.
この場合、ｌμｌ？以下で低容量のプローブ針を開口部
よりＩＣチップ内部のアルミパターンにコンタクトして
波形採集を迅速に行うことができ、プローブ針の横滑り
現象も防止でき安定したコンタクトが可能となる。In this case, lμl? Hereinafter, a low-capacity probe needle can be brought into contact with the aluminum pattern inside the IC chip through the opening, and waveform collection can be quickly performed.Stable contact can be achieved by preventing side-slipping of the probe needle.
（実施例）
以下、本発明におけるパッシベーション膜付き被検査体
の検査方法につき、ＩＣチップ内部の検査方法を例にし
てその一実施例を詳述する。(Example) Hereinafter, an example of the method for inspecting an object to be inspected with a passivation film according to the present invention will be described in detail, taking as an example a method for inspecting the inside of an IC chip.
ＩＣチップ（被検査体）１を保護するために表面に酸化
膜等を被覆してパッシベーション膜２を施している。こ
のパッシベーション膜２は、ＣｖＤ’ｆｆｌによるシリ
コン窒化膜や酸化膜、ＰＳＧ （リンシリケートガラス
） ＩＰＪなどを施し、湿気、金属イオン、腐食性ガス
などの化学物質による汚染や、機械的な損傷、塵挨など
の付着を防止するために行うものである。In order to protect the IC chip (object to be inspected) 1, a passivation film 2 is provided by coating the surface with an oxide film or the like. This passivation film 2 is coated with CvD'ffl silicon nitride film, oxide film, PSG (phosphosilicate glass) IPJ, etc., and is protected against contamination by chemical substances such as moisture, metal ions, corrosive gases, mechanical damage, and dust. This is done to prevent the adhesion of dust, etc.
パッシベーション処理後のＩＣチップ１の電気的特性を
部分的に検査する場合、この被検査位置１ａのアルミパ
ターンを被覆しているパッシベーション膜２を除去して
開口部３を設け、この開口部３より微細パターンの波形
採取等の検査を行うようにする。When partially inspecting the electrical characteristics of the IC chip 1 after passivation treatment, the passivation film 2 covering the aluminum pattern at the inspected position 1a is removed to form an opening 3, and from this opening 3 Inspections such as waveform collection of fine patterns should be performed.
膜除去手段として、本例では、集束イオンビーム手段（
ＦＩＢ）４を走査させ、開口を所望する位置で開口に必
要なエネルギに増大させて開口部３を形成する。本例に
限定されるものではなく。In this example, focused ion beam means (
The FIB) 4 is scanned and the energy required for opening is increased at a desired position to form the opening 3. It is not limited to this example.
その他の手段例えばレーザビーム、電子ビームにより開
口部３を形成するようにしても良い。The opening 3 may be formed by other means such as a laser beam or an electron beam.
位置決めは、イオンビームを比較的小エネルギで走査し
、このビームによる出カバターン信号を取り込み、この
信号と予め記憶された所定信号と比較してパターン認識
技術により位置指定して決定する。Positioning is determined by scanning an ion beam with relatively low energy, capturing an output pattern signal from this beam, comparing this signal with a predetermined signal stored in advance, and specifying the position using pattern recognition technology.
第２図において上記のＦＩＢ４の手段を説明すると、液
体金属ガリウムのイオンソース４ａから電界効果によっ
てガリウムイオンを放出し、このガリウムイオンをフォ
ーカシングレンズ４ｂで集束してイオンビーム４Ｃとし
、このイオンビーム４ｃがパッシベーション膜２に照射
されると、そのパッシベーション膜２の表面から原子又
は分子がはじきとばされ、局所的なエツチングを行い、
被検査位置１ａを被覆しているパッシベーション膜２の
みを３〜５μ口程度除去して開口部３を形成する。To explain the means of the FIB 4 described above in FIG. 2, gallium ions are emitted from an ion source 4a of liquid metal gallium by an electric field effect, and the gallium ions are focused by a focusing lens 4b to form an ion beam 4C. When irradiated onto the passivation film 2, atoms or molecules are repelled from the surface of the passivation film 2, causing local etching.
Only the passivation film 2 covering the inspected position 1a is removed by about 3 to 5 microns to form the opening 3.
この開口部３より１μＦ以下で低容量のプローブ針５を
第１図に示すようにコンタクトさせて波形測定等の検査
をする。この場合、開口部３内でプローブ針５をコンタ
クトさせるので、パターンからの脱落がなく、横滑り現
象も防止でき安定したコンタクトが可能となる。A probe needle 5 having a low capacitance of 1 μF or less is brought into contact with the opening 3 as shown in FIG. 1 to conduct inspections such as waveform measurement. In this case, since the probe needle 5 is brought into contact within the opening 3, it will not fall off from the pattern, and side-sliding phenomenon can be prevented, making stable contact possible.
次に上記実施例の作用を説明する
パッシベーション膜処理を施したＩＣチップ等の被検査
体１の内部を部分的に検査する場合、集束イオンビーム
４により、当該位置のパッシベーション膜２を例えば３
〜５μ口程度除去して開口部３を形成し、この開口部３
より波形採取等の検査を行うことができ、この場合、１
μＦ以下で低容量のプローブ針５を開口部３よりＩＣチ
ップ内部の微細パターンにコンタクトして波形採集を迅
速に行うことができ、プローブ針の横滑り現象もなく安
定したコンタクトができる。Next, when partially inspecting the inside of the test object 1 such as an IC chip that has been subjected to passivation film treatment to explain the operation of the above embodiment, the passivation film 2 at the relevant position is inspected by the focused ion beam 4, for example,
The opening 3 is formed by removing about 5 μm, and this opening 3 is
In this case, 1.
A probe needle 5 having a low capacitance of less than .mu.F can be brought into contact with a fine pattern inside the IC chip through the opening 3 to quickly collect waveforms, and stable contact can be made without side-slipping of the probe needle.
■■
以上のことから明らかなように、本発明によると次のよ
うな優れた効果がある。■■ As is clear from the above, the present invention has the following excellent effects.
即ち、パッジベージ３ン膜の被検査位置のみを集束イオ
ンビーム等の手段により除去した開口部より微細パター
ンにプローブ針をコンタクトさせて検査することができ
るため、ＩＣ内部からの波形採取を迅速に行うことがで
きると共に、プローブ針先の横滑りもな〈従来に比較し
て安定した波形採取等の検査ができ得る等の効果がある
。In other words, only the position to be inspected on the padding membrane can be inspected by bringing the probe needle into contact with the fine pattern through the opening removed by means such as a focused ion beam, so waveforms can be quickly collected from inside the IC. In addition, there is an effect that there is no side slipping of the probe needle tip, and inspections such as waveform collection can be performed more stably than in the past.
第１図又は第２図は本発明におけるパッシベーション膜
付き被検査体の検査方法の一実施例を示したもので、第
１図は、微細パターンにプローブ針をコンタクトさせて
波形採取を行う状態を示した部分拡大断面図、第２図は
、ＦＩＢを説明した概略説明図であり、第３図は、ＩＣ
チップにプローブ針をコンタクトさせて波形採取を行う
従来例を示した部分断面図である。
１・・・被検査体
１ａ・・・被検査位置
２・・・パッシベーション膜
３・・・開口部
４・・・集束イオンビーム手段（ＦＩＢ）５・・・プロ
ーブ針
く−
ロー−
第３図FIG. 1 or FIG. 2 shows an embodiment of the method for inspecting a test object with a passivation film according to the present invention. FIG. The partially enlarged sectional view shown in FIG. 2 is a schematic explanatory diagram illustrating the FIB, and FIG.
FIG. 7 is a partial cross-sectional view showing a conventional example in which waveform collection is performed by bringing a probe needle into contact with a chip. 1...Object to be inspected 1a...Test position 2...Passivation film 3...Opening 4...Focused ion beam means (FIB) 5...Probe needle - Low - Fig. 3
Claims (3)
て、この被検査体の少なくとも被検査位置を被覆してい
るパッシベーシヨン膜を除去して開口部を設け、この開
口部より電気的検査を行うようにしたことを特徴とする
検査方法。(1) In a test object that has been subjected to passivation film treatment, the passivation film that covers at least the tested position of the test object is removed to create an opening, and electrical testing is performed through this opening. An inspection method characterized by:
成した請求項１記載の検査方法。(2) The inspection method according to claim 1, wherein the aperture is formed by focused ion beam means.
査するようにした請求項１又は２記載の検査方法。(3) The inspection method according to claim 1 or 2, wherein the inspection is carried out by contacting the probe needle through the opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31284188A JPH02159048A (en) | 1988-12-13 | 1988-12-13 | Inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31284188A JPH02159048A (en) | 1988-12-13 | 1988-12-13 | Inspection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02159048A true JPH02159048A (en) | 1990-06-19 |
Family
ID=18034071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31284188A Pending JPH02159048A (en) | 1988-12-13 | 1988-12-13 | Inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02159048A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778942A (en) * | 1993-09-07 | 1995-03-20 | Nec Corp | Semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713175A (en) * | 1980-06-23 | 1982-01-23 | Toshiba Corp | Ion etching method |
| JPS57106143A (en) * | 1980-12-24 | 1982-07-01 | Hitachi Ltd | Semiconductor chip |
| JPS60189248A (en) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60216551A (en) * | 1984-04-12 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Ion beam etching method |
| JPS6315550B2 (en) * | 1982-10-30 | 1988-04-05 | Shimadzu Corp |
-
1988
- 1988-12-13 JP JP31284188A patent/JPH02159048A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713175A (en) * | 1980-06-23 | 1982-01-23 | Toshiba Corp | Ion etching method |
| JPS57106143A (en) * | 1980-12-24 | 1982-07-01 | Hitachi Ltd | Semiconductor chip |
| JPS6315550B2 (en) * | 1982-10-30 | 1988-04-05 | Shimadzu Corp | |
| JPS60189248A (en) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60216551A (en) * | 1984-04-12 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Ion beam etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778942A (en) * | 1993-09-07 | 1995-03-20 | Nec Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6614244B2 (en) | Semiconductor device inspecting apparatus | |
| JP2002083849A (en) | Semiconductor device inspecting device | |
| JPH09326425A (en) | Method of defect inspection and its apparatus | |
| US4644264A (en) | Photon assisted tunneling testing of passivated integrated circuits | |
| JP2001127125A (en) | Method and system for inspecting/analyzing defect and inspection device for semiconductor device pattern | |
| JP5009506B2 (en) | Method and system for determining one or more characteristics of a sample | |
| US4786864A (en) | Photon assisted tunneling testing of passivated integrated circuits | |
| JPH03203343A (en) | Inspecting method | |
| US7682844B2 (en) | Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method | |
| JPH02159048A (en) | Inspection method | |
| US6168960B1 (en) | Backside device deprocessing of a flip-chip multi-layer integrated circuit | |
| US6528335B2 (en) | Electrical method for assessing yield-limiting asperities in silicon-on-insulator wafers | |
| JPS59163505A (en) | Method and device for measuring dimension of fine groove | |
| JPS63116443A (en) | Fib tester | |
| JPS63142825A (en) | Auxiliary evaluation method for ic operation | |
| KR100595137B1 (en) | Method for inspecting electric properties of semiconductor device with fib system | |
| KR100217336B1 (en) | Charge protecting method | |
| JPS62191Y2 (en) | ||
| KR100940648B1 (en) | Method for analyzing defect of semiconductor device | |
| Ebel et al. | Failure analysis of oxide defects | |
| JP3591231B2 (en) | Auger electron spectroscopy | |
| JPH04107838A (en) | Inspection of opening of contact hole | |
| JPH04328843A (en) | Inspecting method of bump electrode | |
| JP2990113B2 (en) | Semiconductor substrate failure analysis apparatus and failure analysis method | |
| JPS6164135A (en) | Semiconductor analyzer |