JPS5713177A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5713177A JPS5713177A JP8459080A JP8459080A JPS5713177A JP S5713177 A JPS5713177 A JP S5713177A JP 8459080 A JP8459080 A JP 8459080A JP 8459080 A JP8459080 A JP 8459080A JP S5713177 A JPS5713177 A JP S5713177A
- Authority
- JP
- Japan
- Prior art keywords
- sio2 film
- cooled
- inlet
- maskless
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To enhance the etching accuracy in the maskless selective etching of a semiconductor element set in an atmosphere of a gas contg. a halogen element with proton ion beams by cooling the element to a specified temp. or below. CONSTITUTION:An anode protrusion 5 cooled with a heat sink 4 holding liq. nitrogen 1 through an electrically insulating material 2 with high heat conductivity is set in a bell jar 11, and an Si single crystalline substrate 14 having an SiO2 film is placed on a sample stand 10 cooled to <=300 deg.K with water cooled pipes 18. Gaseous hydrogen is introduced from an inlet 12, and several kV voltage is applied between the protrusion 5 and a cathode 6. Proton ion beams 13 generated by the ionization of the geseous hydrogen in the electric field are accelerated and deflected with electron lens systems 7, 8, 9 and irradiated on the semiconductor 14 to maskless- etch the surface SiO2 film. At this time, gaseous CF4 is introduced from an inlet 19 and dissociated with the beams 13 to produce CF2 molecules. The CF2 etches SiO2 well, so the SiO2 film is etched with superior accuracy in shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8459080A JPS5713177A (en) | 1980-06-24 | 1980-06-24 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8459080A JPS5713177A (en) | 1980-06-24 | 1980-06-24 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5713177A true JPS5713177A (en) | 1982-01-23 |
| JPS6328993B2 JPS6328993B2 (en) | 1988-06-10 |
Family
ID=13834882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8459080A Granted JPS5713177A (en) | 1980-06-24 | 1980-06-24 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5713177A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4529475A (en) * | 1983-05-31 | 1985-07-16 | Kabushiki Kaisha Toshiba | Dry etching apparatus and method using reactive gases |
| JPS6277485A (en) * | 1985-07-15 | 1987-04-09 | テキサス インスツルメンツ インコ−ポレイテツド | Method for etching silicon oxide membrane |
| JPS63301952A (en) * | 1986-12-26 | 1988-12-08 | Seiko Instr & Electronics Ltd | Method and device for repairing mask |
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| CN110648891A (en) * | 2019-09-20 | 2020-01-03 | 吴建湘 | Silicon dioxide removing assembly for plasma etching machine |
-
1980
- 1980-06-24 JP JP8459080A patent/JPS5713177A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4529475A (en) * | 1983-05-31 | 1985-07-16 | Kabushiki Kaisha Toshiba | Dry etching apparatus and method using reactive gases |
| JPS6277485A (en) * | 1985-07-15 | 1987-04-09 | テキサス インスツルメンツ インコ−ポレイテツド | Method for etching silicon oxide membrane |
| JPS63301952A (en) * | 1986-12-26 | 1988-12-08 | Seiko Instr & Electronics Ltd | Method and device for repairing mask |
| JPH0553259B2 (en) * | 1986-12-26 | 1993-08-09 | Seiko Instr & Electronics | |
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| CN110648891A (en) * | 2019-09-20 | 2020-01-03 | 吴建湘 | Silicon dioxide removing assembly for plasma etching machine |
| CN110648891B (en) * | 2019-09-20 | 2022-02-15 | 湖北中培电子科技有限公司 | Silicon dioxide removing assembly for plasma etching machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328993B2 (en) | 1988-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4450031A (en) | Ion shower apparatus | |
| US4255230A (en) | Plasma etching process | |
| US4431473A (en) | RIE Apparatus utilizing a shielded magnetron to enhance etching | |
| EP0064163B1 (en) | High speed plasma etching system | |
| US4521286A (en) | Hollow cathode sputter etcher | |
| US4999320A (en) | Method for suppressing ionization avalanches in a helium wafer cooling assembly | |
| KR20070057172A (en) | Apparatus for the optimization of atmospheric plasma in a plasma processing system | |
| US6852195B2 (en) | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment | |
| KR100189646B1 (en) | Method and apparatus for heating and cooling semiconductor wafer in semiconductor wafer processing equipment | |
| US2842466A (en) | Method of making p-nu junction semiconductor unit | |
| KR960000982A (en) | Method for producing fluorine-containing polyimide film | |
| JPS5730325A (en) | Manufacture of amorphous silicon thin film | |
| JPS5713177A (en) | Etching method | |
| Knechtli et al. | Generation and measurement of highly ionized quiescent plasmas in steady state | |
| JPS5713176A (en) | Ion etching method | |
| JPS5713175A (en) | Ion etching method | |
| JPS5747873A (en) | Plasma etching method | |
| CN1209947C (en) | Plasma producing device | |
| US4176004A (en) | Method for modifying the characteristics of a semiconductor fusions | |
| JPS58182829A (en) | Dry etching device | |
| JPS6297329A (en) | Dry etching device | |
| JP2929149B2 (en) | Plasma equipment | |
| JPH0626197B2 (en) | Dry etching equipment | |
| JPS6276627A (en) | Dry etching device | |
| DE69840455D1 (en) | Etching of doped SIO2 with high selectivity to undoped Sio2 by means of a high-density plasmasetter |