JPS5713176A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS5713176A
JPS5713176A JP8399780A JP8399780A JPS5713176A JP S5713176 A JPS5713176 A JP S5713176A JP 8399780 A JP8399780 A JP 8399780A JP 8399780 A JP8399780 A JP 8399780A JP S5713176 A JPS5713176 A JP S5713176A
Authority
JP
Japan
Prior art keywords
protrusion
anode
liquefying
temp
elongate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8399780A
Other languages
Japanese (ja)
Other versions
JPS6328992B2 (en
Inventor
Yasuhiro Horiike
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8399780A priority Critical patent/JPS5713176A/en
Publication of JPS5713176A publication Critical patent/JPS5713176A/en
Publication of JPS6328992B2 publication Critical patent/JPS6328992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To elongate the lifetime of an anode in the maskless selective etching of a semiconductor element, etc. with an ionized gas contg. a halogen element by cooling the surface of the anode protrusion to the liquefying temp. of said gas or below. CONSTITUTION:Several kV voltage is applied between an anode protrusion 5 and a cathode 6 arranged in a bell jar 11, and simultaneously a gas contg. a halogen element such as CF4 is introduced into the jar 11 from the inlet 12 under about 10<-2> Torr pressure. Ions of the gaseous CF4 are generated at the tip of the protrusion 5, accelerated and deflected with the cathode 6 and electron lens systems 7, 8, 9, and irradiated on a semiconductor element 14 to etch the element 14. At this time, the protrusion 5 is cooled to the liquefying temp. of gaseous CF4 with a heat sink 4 holding liq. He or H21 through an electrically insulating material 2 with superior heat conductivity. CF4 molecules in the vapor phase are liquefied on the surface of the protrusion 5 to protect the protrusion 5 and elongate the life.
JP8399780A 1980-06-23 1980-06-23 Ion etching method Granted JPS5713176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8399780A JPS5713176A (en) 1980-06-23 1980-06-23 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399780A JPS5713176A (en) 1980-06-23 1980-06-23 Ion etching method

Publications (2)

Publication Number Publication Date
JPS5713176A true JPS5713176A (en) 1982-01-23
JPS6328992B2 JPS6328992B2 (en) 1988-06-10

Family

ID=13818167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399780A Granted JPS5713176A (en) 1980-06-23 1980-06-23 Ion etching method

Country Status (1)

Country Link
JP (1) JPS5713176A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277485A (en) * 1985-07-15 1987-04-09 テキサス　インスツルメンツ　インコ−ポレイテツド Method for etching silicon oxide membrane
JPS6464328A (en) * 1987-09-04 1989-03-10 Hitachi Ltd Plasma cleaning method
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
JPH07193044A (en) * 1992-12-16 1995-07-28 Science & Tech Agency Pattern etching method for sic

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277485A (en) * 1985-07-15 1987-04-09 テキサス　インスツルメンツ　インコ−ポレイテツド Method for etching silicon oxide membrane
JPS6464328A (en) * 1987-09-04 1989-03-10 Hitachi Ltd Plasma cleaning method
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
JPH07193044A (en) * 1992-12-16 1995-07-28 Science & Tech Agency Pattern etching method for sic

Also Published As

Publication number Publication date
JPS6328992B2 (en) 1988-06-10

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