JPS5713176A - Ion etching method - Google Patents
Ion etching methodInfo
- Publication number
- JPS5713176A JPS5713176A JP8399780A JP8399780A JPS5713176A JP S5713176 A JPS5713176 A JP S5713176A JP 8399780 A JP8399780 A JP 8399780A JP 8399780 A JP8399780 A JP 8399780A JP S5713176 A JPS5713176 A JP S5713176A
- Authority
- JP
- Japan
- Prior art keywords
- protrusion
- anode
- liquefying
- temp
- elongate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title 1
- 238000000992 sputter etching Methods 0.000 title 1
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To elongate the lifetime of an anode in the maskless selective etching of a semiconductor element, etc. with an ionized gas contg. a halogen element by cooling the surface of the anode protrusion to the liquefying temp. of said gas or below. CONSTITUTION:Several kV voltage is applied between an anode protrusion 5 and a cathode 6 arranged in a bell jar 11, and simultaneously a gas contg. a halogen element such as CF4 is introduced into the jar 11 from the inlet 12 under about 10<-2> Torr pressure. Ions of the gaseous CF4 are generated at the tip of the protrusion 5, accelerated and deflected with the cathode 6 and electron lens systems 7, 8, 9, and irradiated on a semiconductor element 14 to etch the element 14. At this time, the protrusion 5 is cooled to the liquefying temp. of gaseous CF4 with a heat sink 4 holding liq. He or H21 through an electrically insulating material 2 with superior heat conductivity. CF4 molecules in the vapor phase are liquefied on the surface of the protrusion 5 to protect the protrusion 5 and elongate the life.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8399780A JPS5713176A (en) | 1980-06-23 | 1980-06-23 | Ion etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8399780A JPS5713176A (en) | 1980-06-23 | 1980-06-23 | Ion etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713176A true JPS5713176A (en) | 1982-01-23 |
JPS6328992B2 JPS6328992B2 (en) | 1988-06-10 |
Family
ID=13818167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8399780A Granted JPS5713176A (en) | 1980-06-23 | 1980-06-23 | Ion etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5713176A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6277485A (en) * | 1985-07-15 | 1987-04-09 | テキサス インスツルメンツ インコ−ポレイテツド | Method for etching silicon oxide membrane |
JPS6464328A (en) * | 1987-09-04 | 1989-03-10 | Hitachi Ltd | Plasma cleaning method |
US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
-
1980
- 1980-06-23 JP JP8399780A patent/JPS5713176A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6277485A (en) * | 1985-07-15 | 1987-04-09 | テキサス インスツルメンツ インコ−ポレイテツド | Method for etching silicon oxide membrane |
JPS6464328A (en) * | 1987-09-04 | 1989-03-10 | Hitachi Ltd | Plasma cleaning method |
US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
Also Published As
Publication number | Publication date |
---|---|
JPS6328992B2 (en) | 1988-06-10 |
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