JPS57129898A - Crucible-free zone melting process - Google Patents

Crucible-free zone melting process

Info

Publication number
JPS57129898A
JPS57129898A JP56205067A JP20506781A JPS57129898A JP S57129898 A JPS57129898 A JP S57129898A JP 56205067 A JP56205067 A JP 56205067A JP 20506781 A JP20506781 A JP 20506781A JP S57129898 A JPS57129898 A JP S57129898A
Authority
JP
Japan
Prior art keywords
rod
gas mixture
crucible
molten zone
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56205067A
Other languages
English (en)
Other versions
JPH0348159B2 (ja
Inventor
Miyuurubaueru Arufureeto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS57129898A publication Critical patent/JPS57129898A/ja
Publication of JPH0348159B2 publication Critical patent/JPH0348159B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Silicon Compounds (AREA)
JP56205067A 1980-12-19 1981-12-17 Crucible-free zone melting process Granted JPS57129898A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803048114 DE3048114A1 (de) 1980-12-19 1980-12-19 Verfahren zum tiegelfreien zonenschmelzen

Publications (2)

Publication Number Publication Date
JPS57129898A true JPS57129898A (en) 1982-08-12
JPH0348159B2 JPH0348159B2 (ja) 1991-07-23

Family

ID=6119731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205067A Granted JPS57129898A (en) 1980-12-19 1981-12-17 Crucible-free zone melting process

Country Status (4)

Country Link
EP (1) EP0054657B1 (ja)
JP (1) JPS57129898A (ja)
AT (1) ATE20361T1 (ja)
DE (2) DE3048114A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007112640A (ja) * 2005-10-18 2007-05-10 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0873297A (ja) * 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
DE19520175A1 (de) * 1995-06-01 1996-12-12 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
DK2679706T3 (en) * 2011-02-23 2018-12-17 Shinetsu Handotai Kk PROCEDURE FOR MANUFACTURING N-TYPE SILICON MONO CRYSTAL

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265719A (en) * 1975-11-28 1977-05-31 Nippon Electric Co Producing method of silicon single crystals
JPS55130897A (en) * 1979-03-30 1980-10-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon single crystal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same
DE1140547B (de) * 1959-04-27 1962-12-06 Siemens Ag Verfahren zum Herstellen von kristallinen Halbleiterkoerpern mit grosser Lebensdauer der Minoritaetstraeger
DE2608965A1 (de) * 1976-03-04 1977-09-08 Wacker Chemitronic Verfahren zur bestimmung des donatorgehaltes von hochreinem polykristallinem silicium fuer halbleiterzwecke
DE3048184A1 (de) * 1980-12-19 1982-07-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zum tiegelfreien zonenschmelzen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265719A (en) * 1975-11-28 1977-05-31 Nippon Electric Co Producing method of silicon single crystals
JPS55130897A (en) * 1979-03-30 1980-10-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007112640A (ja) * 2005-10-18 2007-05-10 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶製造方法

Also Published As

Publication number Publication date
EP0054657B1 (de) 1986-06-11
DE3048114A1 (de) 1982-07-29
JPH0348159B2 (ja) 1991-07-23
ATE20361T1 (de) 1986-06-15
EP0054657A1 (de) 1982-06-30
DE3174814D1 (en) 1986-07-17

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