JPS54124896A - Continuous production of high purity polycrystalline silicon rods - Google Patents

Continuous production of high purity polycrystalline silicon rods

Info

Publication number
JPS54124896A
JPS54124896A JP3219578A JP3219578A JPS54124896A JP S54124896 A JPS54124896 A JP S54124896A JP 3219578 A JP3219578 A JP 3219578A JP 3219578 A JP3219578 A JP 3219578A JP S54124896 A JPS54124896 A JP S54124896A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
container
silicon
continuously
high purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3219578A
Other languages
Japanese (ja)
Other versions
JPS6015565B2 (en
Inventor
Fukuhiko Suga
Kenji Tomizawa
Shinichiro Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP3219578A priority Critical patent/JPS6015565B2/en
Publication of JPS54124896A publication Critical patent/JPS54124896A/en
Publication of JPS6015565B2 publication Critical patent/JPS6015565B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE:A mixture of silane chloride and H2 are contactually replenished to molten silicon bath, and from the bottom of the bath solidified polycrystalline silicon is drawn, thereby continuously providing a constant diameter polycrystalline silicon rod. CONSTITUTION:The internals of the cooling container 1 and the precipitating container 2 are replaced by inert gas, then the container 2 is heated by the heater 5 to melt polycrystalline block positioned inside. Next, a raw mixture gas of silane chloride and H2 are continuously admitted through the feed pipe 6 to contact with molten silicon. The reacted gas is exhausted from the pipe 6'. A polycrystalline silicon 4 is drawn by the supporting rod 3 through the opening 13 at the bottom of the cooling container 1 to outside atmosphere. Through the gap between the silicon rod 4 and the opening 13, the inert gas is continuously exhasusted, preventing air penetration.
JP3219578A 1978-03-20 1978-03-20 Continuous manufacturing equipment for high-purity silicon polycrystalline rods Expired JPS6015565B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3219578A JPS6015565B2 (en) 1978-03-20 1978-03-20 Continuous manufacturing equipment for high-purity silicon polycrystalline rods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3219578A JPS6015565B2 (en) 1978-03-20 1978-03-20 Continuous manufacturing equipment for high-purity silicon polycrystalline rods

Publications (2)

Publication Number Publication Date
JPS54124896A true JPS54124896A (en) 1979-09-28
JPS6015565B2 JPS6015565B2 (en) 1985-04-20

Family

ID=12352113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219578A Expired JPS6015565B2 (en) 1978-03-20 1978-03-20 Continuous manufacturing equipment for high-purity silicon polycrystalline rods

Country Status (1)

Country Link
JP (1) JPS6015565B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112385A1 (en) * 1982-06-22 1984-07-04 Harry Levin Apparatus and process for making solar grade silicon.
US6861144B2 (en) 2000-05-11 2005-03-01 Tokuyama Corporation Polycrystalline silicon and process and apparatus for producing the same
DE102007035757A1 (en) * 2007-07-27 2009-01-29 Joint Solar Silicon Gmbh & Co. Kg Process and reactor for the production of silicon
JP2014148455A (en) * 2013-01-30 2014-08-21 Yutaka Kamaike Method for manufacturing a silicon crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112385A1 (en) * 1982-06-22 1984-07-04 Harry Levin Apparatus and process for making solar grade silicon.
US6861144B2 (en) 2000-05-11 2005-03-01 Tokuyama Corporation Polycrystalline silicon and process and apparatus for producing the same
DE102007035757A1 (en) * 2007-07-27 2009-01-29 Joint Solar Silicon Gmbh & Co. Kg Process and reactor for the production of silicon
JP2014148455A (en) * 2013-01-30 2014-08-21 Yutaka Kamaike Method for manufacturing a silicon crystal

Also Published As

Publication number Publication date
JPS6015565B2 (en) 1985-04-20

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