JPS57128983A - Pin diode - Google Patents

Pin diode

Info

Publication number
JPS57128983A
JPS57128983A JP1415781A JP1415781A JPS57128983A JP S57128983 A JPS57128983 A JP S57128983A JP 1415781 A JP1415781 A JP 1415781A JP 1415781 A JP1415781 A JP 1415781A JP S57128983 A JPS57128983 A JP S57128983A
Authority
JP
Japan
Prior art keywords
layers
pin diode
diodes
region
high resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1415781A
Other languages
English (en)
Inventor
Takeshi Kajimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1415781A priority Critical patent/JPS57128983A/ja
Publication of JPS57128983A publication Critical patent/JPS57128983A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP1415781A 1981-02-02 1981-02-02 Pin diode Pending JPS57128983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1415781A JPS57128983A (en) 1981-02-02 1981-02-02 Pin diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1415781A JPS57128983A (en) 1981-02-02 1981-02-02 Pin diode

Publications (1)

Publication Number Publication Date
JPS57128983A true JPS57128983A (en) 1982-08-10

Family

ID=11853311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1415781A Pending JPS57128983A (en) 1981-02-02 1981-02-02 Pin diode

Country Status (1)

Country Link
JP (1) JPS57128983A (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086874A (ja) * 1983-09-21 1985-05-16 シーメンス、アクチエンゲゼルシヤフト 半導体ダイオードとその製法
JPH01262671A (ja) * 1988-04-14 1989-10-19 Sanyo Electric Co Ltd Ｐｉｎダイオード及びその製造方法
WO2001071819A3 (en) * 2000-03-20 2002-02-28 Sarnoff Corp Surface pin device
WO2002101837A3 (de) * 2001-06-08 2003-05-01 Infineon Technologies Ag Laterale pin-diode und verfahren zur herstellung derselben
WO2004019416A1 (de) * 2002-08-23 2004-03-04 Infineon Technologies Ag Hochfrequenzschalter
EP1538673A1 (en) * 2002-09-09 2005-06-08 Sanyo Electric Co., Ltd. Protective device
US7732868B2 (en) 2002-09-09 2010-06-08 Sanyo Electric Co., Ltd. Semiconductor device
JP2012514380A (ja) * 2008-12-31 2012-06-21 シエラ・ネバダ・コーポレイション モノリシック半導体マイクロ波スイッチアレイ
US8450805B2 (en) 2004-12-22 2013-05-28 Semiconductor Components Industries, Llc Compound semiconductor switch circuit device
WO2020117679A1 (en) * 2018-12-03 2020-06-11 Macom Technology Solutions Holdings, Inc. Pin diodes with multi-thickness intrinsic regions
US11127737B2 (en) 2019-02-12 2021-09-21 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters
US11574906B2 (en) 2019-02-28 2023-02-07 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode switches

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086874A (ja) * 1983-09-21 1985-05-16 シーメンス、アクチエンゲゼルシヤフト 半導体ダイオードとその製法
JPH01262671A (ja) * 1988-04-14 1989-10-19 Sanyo Electric Co Ltd Ｐｉｎダイオード及びその製造方法
WO2001071819A3 (en) * 2000-03-20 2002-02-28 Sarnoff Corp Surface pin device
US6617670B2 (en) 2000-03-20 2003-09-09 Sarnoff Corporation Surface PIN device
US6972469B2 (en) 2001-06-08 2005-12-06 Infineon Technologies Ag Lateral PIN diode and method for processing same
WO2002101837A3 (de) * 2001-06-08 2003-05-01 Infineon Technologies Ag Laterale pin-diode und verfahren zur herstellung derselben
US7750442B2 (en) 2002-08-23 2010-07-06 Infineon Technologies Ag High-frequency switch
WO2004019416A1 (de) * 2002-08-23 2004-03-04 Infineon Technologies Ag Hochfrequenzschalter
US8742506B2 (en) 2002-09-09 2014-06-03 Semiconductor Components Industries, Llc Protecting element having first and second high concentration impurity regions separated by insulating region
US7732868B2 (en) 2002-09-09 2010-06-08 Sanyo Electric Co., Ltd. Semiconductor device
EP1538673A4 (en) * 2002-09-09 2009-07-15 Sanyo Electric Co PROTECTION DEVICE
EP1538673A1 (en) * 2002-09-09 2005-06-08 Sanyo Electric Co., Ltd. Protective device
US9735142B2 (en) 2002-09-09 2017-08-15 Semiconductor Components Industries, Llc Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate
US8450805B2 (en) 2004-12-22 2013-05-28 Semiconductor Components Industries, Llc Compound semiconductor switch circuit device
JP2012514380A (ja) * 2008-12-31 2012-06-21 シエラ・ネバダ・コーポレイション モノリシック半導体マイクロ波スイッチアレイ
WO2020117679A1 (en) * 2018-12-03 2020-06-11 Macom Technology Solutions Holdings, Inc. Pin diodes with multi-thickness intrinsic regions
US12074225B2 (en) 2018-12-03 2024-08-27 Macom Technology Solutions Holdings, Inc. PIN diodes with multi-thickness intrinsic regions
US11127737B2 (en) 2019-02-12 2021-09-21 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters
US11705448B2 (en) 2019-02-12 2023-07-18 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters
US12080708B2 (en) 2019-02-12 2024-09-03 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters
US11574906B2 (en) 2019-02-28 2023-02-07 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode switches

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