JPS57128981A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS57128981A
JPS57128981A JP1426781A JP1426781A JPS57128981A JP S57128981 A JPS57128981 A JP S57128981A JP 1426781 A JP1426781 A JP 1426781A JP 1426781 A JP1426781 A JP 1426781A JP S57128981 A JPS57128981 A JP S57128981A
Authority
JP
Japan
Prior art keywords
pressure
amplification
housing
semiconductor strain
gage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1426781A
Other languages
Japanese (ja)
Other versions
JPS6336153B2 (en
Inventor
Ryoichi Kobayashi
Minoru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1426781A priority Critical patent/JPS57128981A/en
Publication of JPS57128981A publication Critical patent/JPS57128981A/en
Publication of JPS6336153B2 publication Critical patent/JPS6336153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To use the titled pressure transducer for a pressure detector, etc. for an automobile, and to obtain the transducer having high reliability by converting the magnitude of pressure working to the surface of a silicon diaphragm into electrical signals by utilizing a piezo-effect. CONSTITUTION:A gage body 4 is arranged onto a port 1 for introducing pressure in a housing 2. The gage body 4 incorporates a semiconductor strain gage 10 disposed onto a die 9 in a casing 7, which has a hole 5 communicated with the port 1 for introducing pressure and on an upper surface thereof a cover 6 is bonded. An electrode of the semiconductor strain gage 10 is electrically taken out to the outside of the casing 7 through an extremely thin wire 11 through ultrasonic bonding. A circuit substrate 13 for amplification is arranged into the housing 2. Accordingly, the output of the semiconductor strain gage 10 is amplified by the circuit substrate 13 for amplification, and signals for the amplification are taken out to the outside of the housing 2 by a terminal 18 for output.
JP1426781A 1981-02-04 1981-02-04 Semiconductor pressure transducer Granted JPS57128981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1426781A JPS57128981A (en) 1981-02-04 1981-02-04 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1426781A JPS57128981A (en) 1981-02-04 1981-02-04 Semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS57128981A true JPS57128981A (en) 1982-08-10
JPS6336153B2 JPS6336153B2 (en) 1988-07-19

Family

ID=11856310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1426781A Granted JPS57128981A (en) 1981-02-04 1981-02-04 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS57128981A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196346U (en) * 1984-11-30 1986-06-20
JP2014098685A (en) * 2012-06-11 2014-05-29 Saginomiya Seisakusho Inc Pressure sensor and method of manufacturing pressure sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196346U (en) * 1984-11-30 1986-06-20
JP2014098685A (en) * 2012-06-11 2014-05-29 Saginomiya Seisakusho Inc Pressure sensor and method of manufacturing pressure sensor

Also Published As

Publication number Publication date
JPS6336153B2 (en) 1988-07-19

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