JPS6478124A - Semiconductive pressure sensitive element - Google Patents

Abstract

PURPOSE:To eliminate the need of using a thick film resistance printed board, etc., and to miniaturize the titled element by containing a peripheral circuit of an amplifying circuit, etc., of an output signal from a gauge resistance formed in a diaphragm part of a semiconductor piece, in the same container as the semiconductor piece. CONSTITUTION:A pressure sensitive silicon piece 1 is joined airtightly to a silicon pedestal 2 by a joining material 12. A signal being proportional to pressure which has entered from a connecting pipe 10 is connected through an electrode wiring 24 to a resistance part 22 and a capacitor part 23 formed by a thin film technique on an insulating layer 21 formed on the upper face of the pedestal from a bonding wire 5. Also, on the silicon piece 1, several pieces of operational amplifiers are accumulated, an amplifying circuit is formed by the operational amplifier and a thin film resistance part, and a signal of a gauge resistance on the silicon piece 1 is amplified and outputted from a terminal 6. In such a way, by integrating a peripheral circuit connected to the gauge resistance together with a resistance and a capacitor formed by a thin film on the surface, a pressure sensitive element being small in size and having high reliability can be obtained.