JPS57128058A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57128058A
JPS57128058A JP55176933A JP17693380A JPS57128058A JP S57128058 A JPS57128058 A JP S57128058A JP 55176933 A JP55176933 A JP 55176933A JP 17693380 A JP17693380 A JP 17693380A JP S57128058 A JPS57128058 A JP S57128058A
Authority
JP
Japan
Prior art keywords
polycrystalline
metal
subsequently
channel fet
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55176933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6334619B2 (enrdf_load_stackoverflow
Inventor
Masahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55176933A priority Critical patent/JPS57128058A/ja
Publication of JPS57128058A publication Critical patent/JPS57128058A/ja
Publication of JPS6334619B2 publication Critical patent/JPS6334619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP55176933A 1980-12-15 1980-12-15 Manufacture of semiconductor device Granted JPS57128058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176933A JPS57128058A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176933A JPS57128058A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62132632A Division JPS6344754A (ja) 1987-05-28 1987-05-28 相補型ｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS57128058A true JPS57128058A (en) 1982-08-09
JPS6334619B2 JPS6334619B2 (enrdf_load_stackoverflow) 1988-07-11

Family

ID=16022274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176933A Granted JPS57128058A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128058A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066467A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
JPS60217657A (ja) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
JPS6419722A (en) * 1987-06-26 1989-01-23 Hewlett Packard Yokogawa Integrated circuit and manufacture thereof
US6583052B2 (en) 2001-09-05 2003-06-24 Hynix Semiconductor Inc. Method of fabricating a semiconductor device having reduced contact resistance
US6878594B2 (en) 1997-07-16 2005-04-12 Fujitsu Limited Semiconductor device having an insulation film with reduced water content

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441871A (en) * 1977-08-26 1979-04-03 Delalande Sa Novel 55hydroxymethyloxazolidinons and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441871A (en) * 1977-08-26 1979-04-03 Delalande Sa Novel 55hydroxymethyloxazolidinons and its manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066467A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
JPS60217657A (ja) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
JPS6419722A (en) * 1987-06-26 1989-01-23 Hewlett Packard Yokogawa Integrated circuit and manufacture thereof
US6878594B2 (en) 1997-07-16 2005-04-12 Fujitsu Limited Semiconductor device having an insulation film with reduced water content
US7232720B2 (en) 1997-07-16 2007-06-19 Fujitsu Limited Method for fabricating a semiconductor device having an insulation film with reduced water content
US7422942B2 (en) 1997-07-16 2008-09-09 Fujitsu Limited Method for fabricating a semiconductor device having an insulation film with reduced water content
US6583052B2 (en) 2001-09-05 2003-06-24 Hynix Semiconductor Inc. Method of fabricating a semiconductor device having reduced contact resistance

Also Published As

Publication number Publication date
JPS6334619B2 (enrdf_load_stackoverflow) 1988-07-11

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