JPS57128047A - High frequency high power transistor - Google Patents

High frequency high power transistor

Info

Publication number
JPS57128047A
JPS57128047A JP56012508A JP1250881A JPS57128047A JP S57128047 A JPS57128047 A JP S57128047A JP 56012508 A JP56012508 A JP 56012508A JP 1250881 A JP1250881 A JP 1250881A JP S57128047 A JPS57128047 A JP S57128047A
Authority
JP
Japan
Prior art keywords
chip
electrode
transistor
substrate
power transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56012508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243545B2 (enExample
Inventor
Yoshiharu Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56012508A priority Critical patent/JPS57128047A/ja
Publication of JPS57128047A publication Critical patent/JPS57128047A/ja
Publication of JPS6243545B2 publication Critical patent/JPS6243545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Bipolar Transistors (AREA)
JP56012508A 1981-01-30 1981-01-30 High frequency high power transistor Granted JPS57128047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012508A JPS57128047A (en) 1981-01-30 1981-01-30 High frequency high power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012508A JPS57128047A (en) 1981-01-30 1981-01-30 High frequency high power transistor

Publications (2)

Publication Number Publication Date
JPS57128047A true JPS57128047A (en) 1982-08-09
JPS6243545B2 JPS6243545B2 (enExample) 1987-09-14

Family

ID=11807282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012508A Granted JPS57128047A (en) 1981-01-30 1981-01-30 High frequency high power transistor

Country Status (1)

Country Link
JP (1) JPS57128047A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2016321171B2 (en) 2015-09-08 2019-08-15 American Science And Engineering, Inc. Backscatter imaging for precision agriculture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer

Also Published As

Publication number Publication date
JPS6243545B2 (enExample) 1987-09-14

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