JPS57127987A - Static semiconductor memory - Google Patents

Static semiconductor memory

Info

Publication number
JPS57127987A
JPS57127987A JP56011972A JP1197281A JPS57127987A JP S57127987 A JPS57127987 A JP S57127987A JP 56011972 A JP56011972 A JP 56011972A JP 1197281 A JP1197281 A JP 1197281A JP S57127987 A JPS57127987 A JP S57127987A
Authority
JP
Japan
Prior art keywords
column
lines
bit
semiconductor memory
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56011972A
Other languages
English (en)
Other versions
JPS6047665B2 (ja
Inventor
Hideaki Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56011972A priority Critical patent/JPS6047665B2/ja
Priority to DE8282300381T priority patent/DE3278893D1/de
Priority to EP82300381A priority patent/EP0057556B1/en
Priority to US06/343,155 priority patent/US4456979A/en
Priority to IE188/82A priority patent/IE54043B1/en
Publication of JPS57127987A publication Critical patent/JPS57127987A/ja
Publication of JPS6047665B2 publication Critical patent/JPS6047665B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP56011972A 1981-01-29 1981-01-29 スタティック半導体メモリ Expired JPS6047665B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56011972A JPS6047665B2 (ja) 1981-01-29 1981-01-29 スタティック半導体メモリ
DE8282300381T DE3278893D1 (en) 1981-01-29 1982-01-26 Static semiconductor memory device
EP82300381A EP0057556B1 (en) 1981-01-29 1982-01-26 Static semiconductor memory device
US06/343,155 US4456979A (en) 1981-01-29 1982-01-27 Static semiconductor memory device
IE188/82A IE54043B1 (en) 1981-01-29 1982-01-28 Static semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56011972A JPS6047665B2 (ja) 1981-01-29 1981-01-29 スタティック半導体メモリ

Publications (2)

Publication Number Publication Date
JPS57127987A true JPS57127987A (en) 1982-08-09
JPS6047665B2 JPS6047665B2 (ja) 1985-10-23

Family

ID=11792517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56011972A Expired JPS6047665B2 (ja) 1981-01-29 1981-01-29 スタティック半導体メモリ

Country Status (5)

Country Link
US (1) US4456979A (ja)
EP (1) EP0057556B1 (ja)
JP (1) JPS6047665B2 (ja)
DE (1) DE3278893D1 (ja)
IE (1) IE54043B1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3227121A1 (de) * 1982-07-20 1984-01-26 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum lesen bipolarer speicherzellen
JPS60205895A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体記憶装置
EP0179351B1 (en) * 1984-10-11 1992-10-07 Hitachi, Ltd. Semiconductor memory
US5200924A (en) * 1989-03-30 1993-04-06 Synergy Semiconductor Corporation Bit line discharge and sense circuit
US6294919B1 (en) * 1998-03-27 2001-09-25 Infineon Technologies Ag Method for nondestructive measurement of dopant concentrations and profiles in the drift region of certain semiconductor devices
US6478759B1 (en) * 2000-03-09 2002-11-12 Deroyal Industries, Inc. Thoraco-lumbo-sacral orthosis

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2129166B2 (de) * 1970-06-12 1974-03-28 Hitachi Ltd., Tokio Halbleiterspeicher
DE2744490C2 (de) * 1977-10-04 1979-07-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bipolar-Halbleiterspeicher
DE3070152D1 (en) * 1979-07-26 1985-03-28 Fujitsu Ltd Semiconductor memory device including integrated injection logic memory cells
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置

Also Published As

Publication number Publication date
IE820188L (en) 1982-07-29
EP0057556A2 (en) 1982-08-11
JPS6047665B2 (ja) 1985-10-23
US4456979A (en) 1984-06-26
EP0057556A3 (en) 1985-11-27
DE3278893D1 (en) 1988-09-15
IE54043B1 (en) 1989-05-24
EP0057556B1 (en) 1988-08-10

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