JPS57124438A - Ion beam etching for silicon carbide - Google Patents

Ion beam etching for silicon carbide

Info

Publication number
JPS57124438A
JPS57124438A JP993681A JP993681A JPS57124438A JP S57124438 A JPS57124438 A JP S57124438A JP 993681 A JP993681 A JP 993681A JP 993681 A JP993681 A JP 993681A JP S57124438 A JPS57124438 A JP S57124438A
Authority
JP
Japan
Prior art keywords
etching
ion beam
sic
silicon carbide
beam etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP993681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0222538B2 (enrdf_load_html_response
Inventor
Susumu Nanba
Hiroaki Aritome
Shinji Matsui
Toshiya Yamato
Shinya Mizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP993681A priority Critical patent/JPS57124438A/ja
Publication of JPS57124438A publication Critical patent/JPS57124438A/ja
Publication of JPH0222538B2 publication Critical patent/JPH0222538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP993681A 1981-01-26 1981-01-26 Ion beam etching for silicon carbide Granted JPS57124438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Publications (2)

Publication Number Publication Date
JPS57124438A true JPS57124438A (en) 1982-08-03
JPH0222538B2 JPH0222538B2 (enrdf_load_html_response) 1990-05-18

Family

ID=11733905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP993681A Granted JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Country Status (1)

Country Link
JP (1) JPS57124438A (enrdf_load_html_response)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180124A (ja) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> イオンビ−ムエツチング法
JPS61150272A (ja) * 1984-12-24 1986-07-08 Sharp Corp 炭化珪素半導体素子の製造方法
JPS62216335A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd ドライエツチング方法
JPH04293234A (ja) * 1991-03-22 1992-10-16 Shimadzu Corp ＳｉＣのエッチング方法
EP0767490A1 (en) * 1995-10-02 1997-04-09 Motorola, Inc. Method of etching silicon carbide
JP2012182373A (ja) * 2011-03-02 2012-09-20 Taiyo Nippon Sanso Corp 炭化珪素除去装置、及び炭化珪素の除去方法
US8637872B2 (en) 2008-11-19 2014-01-28 Showa Denko K.K. Semiconductor device and method of manufacturing semiconductor device
JP2019087642A (ja) * 2017-11-07 2019-06-06 株式会社ハイシック 化合物半導体ウエハの加工方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353263A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor element
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353263A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor element
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180124A (ja) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> イオンビ−ムエツチング法
JPS61150272A (ja) * 1984-12-24 1986-07-08 Sharp Corp 炭化珪素半導体素子の製造方法
JPS62216335A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd ドライエツチング方法
JPH04293234A (ja) * 1991-03-22 1992-10-16 Shimadzu Corp ＳｉＣのエッチング方法
EP0767490A1 (en) * 1995-10-02 1997-04-09 Motorola, Inc. Method of etching silicon carbide
US8637872B2 (en) 2008-11-19 2014-01-28 Showa Denko K.K. Semiconductor device and method of manufacturing semiconductor device
JP2012182373A (ja) * 2011-03-02 2012-09-20 Taiyo Nippon Sanso Corp 炭化珪素除去装置、及び炭化珪素の除去方法
JP2019087642A (ja) * 2017-11-07 2019-06-06 株式会社ハイシック 化合物半導体ウエハの加工方法

Also Published As

Publication number Publication date
JPH0222538B2 (enrdf_load_html_response) 1990-05-18

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