JPS57122542A - Electrode structure for semiconductor element - Google Patents
Electrode structure for semiconductor elementInfo
- Publication number
- JPS57122542A JPS57122542A JP794481A JP794481A JPS57122542A JP S57122542 A JPS57122542 A JP S57122542A JP 794481 A JP794481 A JP 794481A JP 794481 A JP794481 A JP 794481A JP S57122542 A JPS57122542 A JP S57122542A
- Authority
- JP
- Grant status
- Application
- Patent type
- Prior art keywords
- layer
- probing
- electrode
- element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
- H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Abstract
PURPOSE:To prevent the deformation and the damage of a projected solder electrode due to a probing in a semiconductor element and to increase the reliability of the device by forming a probing pad formed in height lower than the projected electrode separately at the position from the projected electrode at the periphery of a substrate provided with the projected solder electrode. CONSTITUTION:An aluminum wire 14 connected to an element substrate 10 through a window is formed on an insulating film 12 on the substrate 10, and a metallic layer 18 of three layers (Ti-Cu-Ti) connected to the aluminum wire layer 14 through the window of a passivation layer 16. A solder bump 20 is formed on a part of the layer 18 by removing the Ti layer on the upper layer, and a probing solder pad 22 having a height higher than the bump 20 and an area smaller than that is formed in the vicinity of the substrate of the layer 18. When the element is tested for probing, a probing stylus is contacted with the pad 22. In this manner, the deformation and the damage can be eliminated at the bump 20, and the decrease in the reliability of the element due to the probing can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP794481A JPS57122542A (en) | 1981-01-23 | 1981-01-23 | Electrode structure for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP794481A JPS57122542A (en) | 1981-01-23 | 1981-01-23 | Electrode structure for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122542A true true JPS57122542A (en) | 1982-07-30 |
Family
ID=11679600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP794481A Pending JPS57122542A (en) | 1981-01-23 | 1981-01-23 | Electrode structure for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122542A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6031244A (en) * | 1983-08-01 | 1985-02-18 | Oki Electric Ind Co Ltd | Semiconductor device |
US5734199A (en) * | 1995-12-18 | 1998-03-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having improved test electrodes |
US5969424A (en) * | 1997-03-19 | 1999-10-19 | Fujitsu Limited | Semiconductor device with pad structure |
US6204074B1 (en) * | 1995-01-09 | 2001-03-20 | International Business Machines Corporation | Chip design process for wire bond and flip-chip package |
US6373143B1 (en) | 1998-09-24 | 2002-04-16 | International Business Machines Corporation | Integrated circuit having wirebond pads suitable for probing |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230381A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Semiconductor integrating circuit |
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230381A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Semiconductor integrating circuit |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6031244A (en) * | 1983-08-01 | 1985-02-18 | Oki Electric Ind Co Ltd | Semiconductor device |
US6204074B1 (en) * | 1995-01-09 | 2001-03-20 | International Business Machines Corporation | Chip design process for wire bond and flip-chip package |
US5734199A (en) * | 1995-12-18 | 1998-03-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having improved test electrodes |
US5811351A (en) * | 1995-12-18 | 1998-09-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
EP0780893A3 (en) * | 1995-12-18 | 1998-09-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US5969424A (en) * | 1997-03-19 | 1999-10-19 | Fujitsu Limited | Semiconductor device with pad structure |
US6232147B1 (en) | 1997-03-19 | 2001-05-15 | Fujitsu Limited | Method for manufacturing semiconductor device with pad structure |
US6373143B1 (en) | 1998-09-24 | 2002-04-16 | International Business Machines Corporation | Integrated circuit having wirebond pads suitable for probing |
US6429675B2 (en) | 1998-09-24 | 2002-08-06 | International Business Machines Corporation | Structure and method for probing wiring bond pads |
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