JPS57122534A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57122534A JPS57122534A JP56008817A JP881781A JPS57122534A JP S57122534 A JPS57122534 A JP S57122534A JP 56008817 A JP56008817 A JP 56008817A JP 881781 A JP881781 A JP 881781A JP S57122534 A JPS57122534 A JP S57122534A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- annealing
- primary
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 11
- 238000000137 annealing Methods 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008817A JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008817A JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57122534A true JPS57122534A (en) | 1982-07-30 |
| JPS628012B2 JPS628012B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Family
ID=11703358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56008817A Granted JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122534A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893224A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体単結晶膜の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548926A (en) * | 1978-10-02 | 1980-04-08 | Hitachi Ltd | Preparation of semiconductor device |
-
1981
- 1981-01-22 JP JP56008817A patent/JPS57122534A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548926A (en) * | 1978-10-02 | 1980-04-08 | Hitachi Ltd | Preparation of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893224A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体単結晶膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628012B2 (enrdf_load_stackoverflow) | 1987-02-20 |
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