JPS5711897A - Method of pulling up single crystal and device therefor - Google Patents
Method of pulling up single crystal and device thereforInfo
- Publication number
- JPS5711897A JPS5711897A JP8817480A JP8817480A JPS5711897A JP S5711897 A JPS5711897 A JP S5711897A JP 8817480 A JP8817480 A JP 8817480A JP 8817480 A JP8817480 A JP 8817480A JP S5711897 A JPS5711897 A JP S5711897A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crucible
- heaters
- single crystal
- temperature distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 3
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Resistance Heating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8817480A JPS5711897A (en) | 1980-06-27 | 1980-06-27 | Method of pulling up single crystal and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8817480A JPS5711897A (en) | 1980-06-27 | 1980-06-27 | Method of pulling up single crystal and device therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5711897A true JPS5711897A (en) | 1982-01-21 |
| JPS6234717B2 JPS6234717B2 (enExample) | 1987-07-28 |
Family
ID=13935539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8817480A Granted JPS5711897A (en) | 1980-06-27 | 1980-06-27 | Method of pulling up single crystal and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5711897A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137399A (ja) * | 1983-01-28 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | 低転位密度単結晶の育成方法及びその装置 |
| JPS60221391A (ja) * | 1984-04-18 | 1985-11-06 | Toshiba Corp | 化合物半導体単結晶育成装置 |
| JPS6144794A (ja) * | 1984-08-08 | 1986-03-04 | Hitachi Ltd | 発熱体 |
| US4645560A (en) * | 1983-08-26 | 1987-02-24 | Sumito Electric Industries, Ltd. | Liquid encapsulation method for growing single semiconductor crystals |
| US4863554A (en) * | 1983-08-23 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Process for pulling a single crystal |
| AT400848B (de) * | 1984-08-24 | 1996-03-25 | Sony Corp | Vorrichtung zum züchten eines einkristalls |
-
1980
- 1980-06-27 JP JP8817480A patent/JPS5711897A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137399A (ja) * | 1983-01-28 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | 低転位密度単結晶の育成方法及びその装置 |
| US4863554A (en) * | 1983-08-23 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Process for pulling a single crystal |
| US4645560A (en) * | 1983-08-26 | 1987-02-24 | Sumito Electric Industries, Ltd. | Liquid encapsulation method for growing single semiconductor crystals |
| JPS60221391A (ja) * | 1984-04-18 | 1985-11-06 | Toshiba Corp | 化合物半導体単結晶育成装置 |
| JPS6144794A (ja) * | 1984-08-08 | 1986-03-04 | Hitachi Ltd | 発熱体 |
| AT400848B (de) * | 1984-08-24 | 1996-03-25 | Sony Corp | Vorrichtung zum züchten eines einkristalls |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6234717B2 (enExample) | 1987-07-28 |
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