JPS57118676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57118676A
JPS57118676A JP55187342A JP18734280A JPS57118676A JP S57118676 A JPS57118676 A JP S57118676A JP 55187342 A JP55187342 A JP 55187342A JP 18734280 A JP18734280 A JP 18734280A JP S57118676 A JPS57118676 A JP S57118676A
Authority
JP
Japan
Prior art keywords
layer
approximately
channel
type
enhancement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187342A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353707B2 (enrdf_load_stackoverflow
Inventor
Hidetoshi Nishi
Sukehisa Hiyamizu
Shigeru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187342A priority Critical patent/JPS57118676A/ja
Priority to DE8181305986T priority patent/DE3171953D1/de
Priority to EP81305986A priority patent/EP0056904B1/en
Publication of JPS57118676A publication Critical patent/JPS57118676A/ja
Publication of JPS6353707B2 publication Critical patent/JPS6353707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55187342A 1980-12-29 1980-12-29 Semiconductor device Granted JPS57118676A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55187342A JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device
DE8181305986T DE3171953D1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices
EP81305986A EP0056904B1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187342A JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57118676A true JPS57118676A (en) 1982-07-23
JPS6353707B2 JPS6353707B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=16204314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187342A Granted JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118676A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954271A (ja) * 1982-09-21 1984-03-29 Agency Of Ind Science & Technol 半導体集積回路装置
JPS62149274U (enrdf_load_stackoverflow) * 1986-03-13 1987-09-21
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954271A (ja) * 1982-09-21 1984-03-29 Agency Of Ind Science & Technol 半導体集積回路装置
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPS62149274U (enrdf_load_stackoverflow) * 1986-03-13 1987-09-21

Also Published As

Publication number Publication date
JPS6353707B2 (enrdf_load_stackoverflow) 1988-10-25

Similar Documents

Publication Publication Date Title
US5104825A (en) Method of producing a semiconductor device
JPS59207667A (ja) 半導体装置
JPS6482677A (en) Field-effect transistor
JP2527775B2 (ja) 電界効果トランジスタ及びその製造方法
JPS57118676A (en) Semiconductor device
JPS52152164A (en) Epitaxial wafer of group iii-v compound
Tsui et al. Radiation effects on modulation‐doped GaAs‐Al x Ga1− x As heterostructures
JPS5694780A (en) Semiconductor device
JPS6474765A (en) Hetero-junction fet
JPS57193069A (en) Semiconductor device
JPS6441273A (en) Field effect transistor
Wang et al. High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate
Henderson et al. Transient annealing of modulation-doped GaAs/Al x Ga1− x As heterostructures
Taylor et al. An n-channel BICFET in the GaAs/AlGaAs material system
JPS6450570A (en) Semiconductor device
Kiehl et al. High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment
Prost et al. High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
Uppal et al. High‐indium modulation doped field effect transistors on GaAs substrates
Ruden et al. High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs
Webb et al. Structure of the U-band in neutron irradiated MOVPE grown n-GaAs epilayers
Liu et al. A backside‐illuminated imaging AlGaAs/GaAs charge‐coupled device
JPS5412261A (en) Semiconductor wafer
JPH0810762B2 (ja) 半導体装置
Su et al. Molecular beam epitaxial double heterojunction bipolar transistors with high current gains
JPS6459962A (en) Semiconductor device