JPS6353707B2 - - Google Patents

Info

Publication number
JPS6353707B2
JPS6353707B2 JP55187342A JP18734280A JPS6353707B2 JP S6353707 B2 JPS6353707 B2 JP S6353707B2 JP 55187342 A JP55187342 A JP 55187342A JP 18734280 A JP18734280 A JP 18734280A JP S6353707 B2 JPS6353707 B2 JP S6353707B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
gallium arsenide
electron
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55187342A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57118676A (en
Inventor
Hidetoshi Nishi
Sukehisa Hyamizu
Shigeru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187342A priority Critical patent/JPS57118676A/ja
Priority to EP81305986A priority patent/EP0056904B1/en
Priority to DE8181305986T priority patent/DE3171953D1/de
Publication of JPS57118676A publication Critical patent/JPS57118676A/ja
Publication of JPS6353707B2 publication Critical patent/JPS6353707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55187342A 1980-12-29 1980-12-29 Semiconductor device Granted JPS57118676A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55187342A JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device
EP81305986A EP0056904B1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices
DE8181305986T DE3171953D1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187342A JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57118676A JPS57118676A (en) 1982-07-23
JPS6353707B2 true JPS6353707B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=16204314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187342A Granted JPS57118676A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118676A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954271A (ja) * 1982-09-21 1984-03-29 Agency Of Ind Science & Technol 半導体集積回路装置
JPH0793428B2 (ja) * 1984-10-03 1995-10-09 株式会社日立製作所 半導体装置及びその製造方法
JPS62149274U (enrdf_load_stackoverflow) * 1986-03-13 1987-09-21

Also Published As

Publication number Publication date
JPS57118676A (en) 1982-07-23

Similar Documents

Publication Publication Date Title
US4452646A (en) Method of making planar III-V compound device by ion implantation
US4814851A (en) High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor
US4729000A (en) Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates
US4573064A (en) GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US5161235A (en) Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold
US4662058A (en) Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs
US5116774A (en) Heterojunction method and structure
JPH0716003B2 (ja) デバイスの製造方法
EP0130676B1 (en) Semiconductor device having a hetero junction
US4717685A (en) Method for producing a metal semiconductor field effect transistor
EP0080714B1 (en) Hetero-junction semiconductor device
JPH0259624B2 (enrdf_load_stackoverflow)
US5101245A (en) Field effect transistor and method for making same
US4771324A (en) Heterojunction field effect device having an implanted region within a device channel
JPS6353707B2 (enrdf_load_stackoverflow)
EP0056904B1 (en) High electron mobility single heterojunction semiconductor devices and methods of production of such devices
JP3373386B2 (ja) 半導体装置及びその製造方法
JPS6353708B2 (enrdf_load_stackoverflow)
JP3210533B2 (ja) 電界効果トランジスタの製造方法
KR910006698B1 (ko) 반도체 장치
JPS61274370A (ja) 接合形電界効果トランジスタ
JP3442498B2 (ja) 化合物半導体装置及びその製造方法
JPS5918679A (ja) 半導体装置
EP0078452A2 (en) GaAs bipolar integrated circuit devices
JPS62213131A (ja) ３−ｖ族半導体装置の製造方法