JPS5711813A - Preparation of carbide film resistor - Google Patents

Preparation of carbide film resistor

Info

Publication number
JPS5711813A
JPS5711813A JP8555380A JP8555380A JPS5711813A JP S5711813 A JPS5711813 A JP S5711813A JP 8555380 A JP8555380 A JP 8555380A JP 8555380 A JP8555380 A JP 8555380A JP S5711813 A JPS5711813 A JP S5711813A
Authority
JP
Japan
Prior art keywords
gas
substrate
film resistor
sputtering
carbide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8555380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322043B2 (enrdf_load_stackoverflow
Inventor
Kazushi Yamamoto
Takeshi Nagai
Ikuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8555380A priority Critical patent/JPS5711813A/ja
Priority to GB8032616A priority patent/GB2061002B/en
Priority to AU63093/80A priority patent/AU524439B2/en
Priority to US06/196,011 priority patent/US4359372A/en
Priority to CA000362125A priority patent/CA1143865A/en
Priority to DE3038375A priority patent/DE3038375C2/de
Priority to FR8022342A priority patent/FR2467472A1/fr
Publication of JPS5711813A publication Critical patent/JPS5711813A/ja
Publication of JPS6322043B2 publication Critical patent/JPS6322043B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
JP8555380A 1979-10-11 1980-06-23 Preparation of carbide film resistor Granted JPS5711813A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8555380A JPS5711813A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor
GB8032616A GB2061002B (en) 1979-10-11 1980-10-09 Method for making a carbide thin film thermistor
AU63093/80A AU524439B2 (en) 1979-10-11 1980-10-09 Sputtered thin film thermistor
US06/196,011 US4359372A (en) 1979-10-11 1980-10-10 Method for making a carbide thin film thermistor
CA000362125A CA1143865A (en) 1979-10-11 1980-10-10 Method for making a carbide thin film thermistor
DE3038375A DE3038375C2 (de) 1979-10-11 1980-10-10 Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten
FR8022342A FR2467472A1 (fr) 1979-10-11 1980-10-13 Procede de fabrication d'une thermistance a pellicule mince de carbure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8555380A JPS5711813A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Publications (2)

Publication Number Publication Date
JPS5711813A true JPS5711813A (en) 1982-01-21
JPS6322043B2 JPS6322043B2 (enrdf_load_stackoverflow) 1988-05-10

Family

ID=13862017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8555380A Granted JPS5711813A (en) 1979-10-11 1980-06-23 Preparation of carbide film resistor

Country Status (1)

Country Link
JP (1) JPS5711813A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148428A (ja) * 1982-03-01 1983-09-03 Nec Corp 絶縁膜形成方法
JPH0415908A (ja) * 1990-05-09 1992-01-21 Shin Etsu Chem Co Ltd ＳｉＣとＳｉ↓３Ｎ↓４よりなる複合膜の製造方法およびＸ線リソグラフィー用マスクの製造方法
JP2001220237A (ja) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor
JPS6122444A (ja) * 1984-07-10 1986-01-31 Toshiba Corp 光学式デイスク再生装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor
JPS6122444A (ja) * 1984-07-10 1986-01-31 Toshiba Corp 光学式デイスク再生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148428A (ja) * 1982-03-01 1983-09-03 Nec Corp 絶縁膜形成方法
JPH0415908A (ja) * 1990-05-09 1992-01-21 Shin Etsu Chem Co Ltd ＳｉＣとＳｉ↓３Ｎ↓４よりなる複合膜の製造方法およびＸ線リソグラフィー用マスクの製造方法
JP2001220237A (ja) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法

Also Published As

Publication number Publication date
JPS6322043B2 (enrdf_load_stackoverflow) 1988-05-10

Similar Documents

Publication Publication Date Title
US4016061A (en) Method of making resistive films
JPS62122011A (ja) 透明導電膜の製造方法
GB1325961A (en) Feroelectric device and process of manufacturing same
US4627902A (en) Method of producing a resistance element for a resistance thermometer
US6365014B2 (en) Cathode targets of silicon and transition metal
Igasaki et al. Some properties of Al-doped ZnO transparent conducting films prepared by RF reactive sputtering
GB1118758A (en) Improvements in or relating to the sputtering of conductive materials
JPS5711813A (en) Preparation of carbide film resistor
JPH0344465A (ja) Ｉｔｏ透明導電膜用スパッタリングターゲットの製造方法
JPH1088332A (ja) スパッタリングターゲットおよび透明導電膜とその製造方法
JPH0121109B2 (enrdf_load_stackoverflow)
JPS5711811A (en) Preparation of carbide film resistor
Adachi et al. Superconducting thin films of Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O with Tc above 100 K
JPS5711812A (en) Preparation of carbide film resistor
JPS569249A (en) Electrically conductive infrared shielding glass and its manufacture
JPS5727079A (en) Manufacture of josephson element of oxide superconductor
Koltai et al. Segregation phenomena in thin NiCr layers
NL6615850A (enrdf_load_stackoverflow)
US6793781B2 (en) Cathode targets of silicon and transition metal
US3803057A (en) Resistive materials and method of making such materials
JPH04341707A (ja) 透明導電膜
JPH0765167B2 (ja) Ｉｔｏ透明導電膜用スパッタリングターゲット
JPS5492274A (en) Thermal head
Muralidhar et al. Study of discharge characteristics in pure argon and oxygen during dc sputtering of YBaCuO films
JPS57196745A (en) Substrate having deposited electrically conductive transparent film and its manufacture