JPS57117270A - Mos type integrated circuit - Google Patents

Mos type integrated circuit

Info

Publication number
JPS57117270A
JPS57117270A JP56002750A JP275081A JPS57117270A JP S57117270 A JPS57117270 A JP S57117270A JP 56002750 A JP56002750 A JP 56002750A JP 275081 A JP275081 A JP 275081A JP S57117270 A JPS57117270 A JP S57117270A
Authority
JP
Japan
Prior art keywords
transistors
concentration
substrates
semiconductor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56002750A
Other languages
English (en)
Inventor
Yukimasa Uchida
Mitsuo Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56002750A priority Critical patent/JPS57117270A/ja
Publication of JPS57117270A publication Critical patent/JPS57117270A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
JP56002750A 1981-01-13 1981-01-13 Mos type integrated circuit Pending JPS57117270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002750A JPS57117270A (en) 1981-01-13 1981-01-13 Mos type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002750A JPS57117270A (en) 1981-01-13 1981-01-13 Mos type integrated circuit

Publications (1)

Publication Number Publication Date
JPS57117270A true JPS57117270A (en) 1982-07-21

Family

ID=11538017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002750A Pending JPS57117270A (en) 1981-01-13 1981-01-13 Mos type integrated circuit

Country Status (1)

Country Link
JP (1) JPS57117270A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009269495A (ja) * 2008-05-08 2009-11-19 Shima Seisakusho:Kk 手押し車の折りたたみロック装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009269495A (ja) * 2008-05-08 2009-11-19 Shima Seisakusho:Kk 手押し車の折りたたみロック装置

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