JPS57115553A - Photoconductive material - Google Patents

Photoconductive material

Info

Publication number
JPS57115553A
JPS57115553A JP56001785A JP178581A JPS57115553A JP S57115553 A JPS57115553 A JP S57115553A JP 56001785 A JP56001785 A JP 56001785A JP 178581 A JP178581 A JP 178581A JP S57115553 A JPS57115553 A JP S57115553A
Authority
JP
Japan
Prior art keywords
layer
substrate
photoconductive
oxygen
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56001785A
Other languages
Japanese (ja)
Other versions
JPS6410065B2 (en
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56001785A priority Critical patent/JPS57115553A/en
Priority to GB8132157A priority patent/GB2095030B/en
Priority to US06/316,552 priority patent/US4414319A/en
Priority to CA000389177A priority patent/CA1154289A/en
Priority to FR8120651A priority patent/FR2497604B1/en
Priority to DE19813143764 priority patent/DE3143764A1/en
Priority to AU77901/81A priority patent/AU548276B2/en
Publication of JPS57115553A publication Critical patent/JPS57115553A/en
Publication of JPS6410065B2 publication Critical patent/JPS6410065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a high-performance photoconductive material, by forming on a conductive substrate a photoconductive amorphous silicon layer containing a specified content of oxygen, and having its distribution being uniform in the direction parallel to the surface of the substrate, but becoming lower in the width direction toward the substrate side. CONSTITUTION:A barrier layer 102 is formed on a conductive substrate 101 with an amorphous material containing Si as a chief component, either of C and N or both, either of H and halogen, or both, or an insulating material, in accordance with need. A photoconductive amorphous silicon layer 103 is formed on the layer 102 by the glow discharge method or the like using a gas containing SiH4, SiCl4, or the like together with B2H6 and PH3 mixed with a proper amount of O2 so as to contain 0.05-30atom% oxygen of the total layer 103, having its distribution uniform in the direction parallel to the surface of the substrate 101, but rising in the width direction toward the surface 104 of the layer 103, and reaching the maximum value as high as 0.3-67atom% near the surface 104, thus permitting the obtained photoreceptor to be superior in charge retentivity, residual potential characteristics, durability, etc., and high in photosensitivity even in a high humidity atmosphere.
JP56001785A 1981-01-08 1981-01-08 Photoconductive material Granted JPS57115553A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56001785A JPS57115553A (en) 1981-01-08 1981-01-08 Photoconductive material
GB8132157A GB2095030B (en) 1981-01-08 1981-10-26 Photoconductive member
US06/316,552 US4414319A (en) 1981-01-08 1981-10-29 Photoconductive member having amorphous layer containing oxygen
CA000389177A CA1154289A (en) 1981-01-08 1981-10-30 Photoconductive member including an amorphous layer of silicon matrix with hydrogen and/or halogen
FR8120651A FR2497604B1 (en) 1981-01-08 1981-11-04 PHOTOCONDUCTIVE ELEMENT
DE19813143764 DE3143764A1 (en) 1981-01-08 1981-11-04 PHOTO-CONDUCTIVE ELEMENT
AU77901/81A AU548276B2 (en) 1981-01-08 1981-11-26 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56001785A JPS57115553A (en) 1981-01-08 1981-01-08 Photoconductive material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57077668A Division JPS5833256A (en) 1982-05-10 1982-05-10 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS57115553A true JPS57115553A (en) 1982-07-19
JPS6410065B2 JPS6410065B2 (en) 1989-02-21

Family

ID=11511222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56001785A Granted JPS57115553A (en) 1981-01-08 1981-01-08 Photoconductive material

Country Status (1)

Country Link
JP (1) JPS57115553A (en)

Also Published As

Publication number Publication date
JPS6410065B2 (en) 1989-02-21

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