JPS57114252A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57114252A
JPS57114252A JP47781A JP47781A JPS57114252A JP S57114252 A JPS57114252 A JP S57114252A JP 47781 A JP47781 A JP 47781A JP 47781 A JP47781 A JP 47781A JP S57114252 A JPS57114252 A JP S57114252A
Authority
JP
Japan
Prior art keywords
wire
aluminum
layer
thickness
disconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47781A
Other languages
Japanese (ja)
Inventor
Noboru Okuyama
Takamichi Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP47781A priority Critical patent/JPS57114252A/en
Publication of JPS57114252A publication Critical patent/JPS57114252A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of an aluminum wire on an upper layer by smoothly forming a contacting hole step at the contacting hole part formed at an SiO2 insulating layer on a polysilicon wire in the wire of a semiconductor device. CONSTITUTION:When an SiO2 insulating layer 4 is formed on a polysilicon wire 2' on a semiconductor substrate 1 and a contacting hole 5' is formed at the layer 4, its position X is sufficiently spaced from the end Y of the wire 2' so as to have a thickness 4 times of the thickness t of the wire 2'. Thus, when aluminum is deposited, it can prevent the disconnection of a wire due to the reduction in the thickness of the aluminum film at the step formed at the layer 4 on the end Y and the disconnection of the aluminum wire due to the reduction in the thickness of the resist at the step similarly due to the flow of the resist in case of photoetching the aluminum wire layer formed thereafter.
JP47781A 1981-01-07 1981-01-07 Semiconductor device Pending JPS57114252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47781A JPS57114252A (en) 1981-01-07 1981-01-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47781A JPS57114252A (en) 1981-01-07 1981-01-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57114252A true JPS57114252A (en) 1982-07-16

Family

ID=11474853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47781A Pending JPS57114252A (en) 1981-01-07 1981-01-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57114252A (en)

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