JPS57109333A - Patterning method by radiant ray beam - Google Patents

Patterning method by radiant ray beam

Info

Publication number
JPS57109333A
JPS57109333A JP18582180A JP18582180A JPS57109333A JP S57109333 A JPS57109333 A JP S57109333A JP 18582180 A JP18582180 A JP 18582180A JP 18582180 A JP18582180 A JP 18582180A JP S57109333 A JPS57109333 A JP S57109333A
Authority
JP
Japan
Prior art keywords
patterned
pattern groups
subcell
ray beam
split
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18582180A
Other languages
Japanese (ja)
Inventor
Sadao Sasaki
Mineo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP18582180A priority Critical patent/JPS57109333A/en
Publication of JPS57109333A publication Critical patent/JPS57109333A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. programme control
    • H01J37/3023Programme control
    • H01J37/3026Patterning strategy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To contrive high-speed patterning by a method wherein, after the patterning has been performed on every other split region of the prescribed number of a subcell, the remaining split regions are successively patterned, and a subcell is patterned by giving a plurality of scannings of radiant ray beam. CONSTITUTION:The subcells 2a-2i are formed into a single subcell 3, and the drawn pattern in the subcell is split in horizontal direction at the point where a sudden change occurs, and are divided into a plurality of pattern groups 4a-4e. Besides, the width in horizontal direction of the pattern groups 4a-4e is to be set at in such a manner that the positional change of an electron beam can be circuitously followed. Pattern groups 4a, 4c and 4e are patterned by scanning electron beam, in other words, the pattern groups 4a-4e are patterned every other group. Then, the remaining pattern groups 4b and 4d are patterned by performing the second scanning.
JP18582180A 1980-12-26 1980-12-26 Patterning method by radiant ray beam Pending JPS57109333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18582180A JPS57109333A (en) 1980-12-26 1980-12-26 Patterning method by radiant ray beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18582180A JPS57109333A (en) 1980-12-26 1980-12-26 Patterning method by radiant ray beam

Publications (1)

Publication Number Publication Date
JPS57109333A true JPS57109333A (en) 1982-07-07

Family

ID=16177462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18582180A Pending JPS57109333A (en) 1980-12-26 1980-12-26 Patterning method by radiant ray beam

Country Status (1)

Country Link
JP (1) JPS57109333A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091633A (en) * 1983-10-26 1985-05-23 Toshiba Corp Electron beam drawing process
JPS60254616A (en) * 1984-05-30 1985-12-16 Fujitsu Ltd Electron beam exposure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091633A (en) * 1983-10-26 1985-05-23 Toshiba Corp Electron beam drawing process
JPH0582051B2 (en) * 1983-10-26 1993-11-17 Tokyo Shibaura Electric Co
JPS60254616A (en) * 1984-05-30 1985-12-16 Fujitsu Ltd Electron beam exposure

Similar Documents

Publication Publication Date Title
JPS5512791A (en) Semiconductor device
JPS57109333A (en) Patterning method by radiant ray beam
JPS5734334A (en) Pattern forming
JPS5776837A (en) Apparatus for multipile electron beam exposure
JPS525150A (en) Method of distributing containers
JPS5421696A (en) N.c. lathe and processing method making use of the same
JPS6460101A (en) Electronic scanning antenna
JPS57155672A (en) Feature extracting circuit system of 2-dimensional pattern
JPS53100767A (en) Production of semiconductor device
JPS54149450A (en) Antenna unit
GB1498326A (en) Thyristors
JPS54134435A (en) Multi-stylus electrode arranging method
JPS5555534A (en) Method of making pattern by electron beam
JPS55143032A (en) Method of exposure of electron beam
JPS5555340A (en) Photo mask for automatically aligning exposure and automatically aligning exposure method
JPS5598027A (en) Method of stacking tile on pallet
JPS5211762A (en) Method of manufacturing semiconductor devices
JPS54152799A (en) Scattered radiant ray removing device and its preparation
JPS558162A (en) Directive antenna
JPS60158644A (en) Large scale integrated circuit device
JPS5377170A (en) Selective growth method of compound semiconductor
JPS56114077A (en) Optical character reader
JPS53134372A (en) Charge transfer type semiconductor device and its driving method
JPS6490529A (en) Mask for exposure and exposure method
JPS5261928A (en) Pattern characteristics extraction system